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參數(shù)資料
| 型號(hào)： | AM29F200BT-90DTE1 |
| 英文描述： | 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFS3207ZPBF with Standard Packaging |
| 中文描述： | EEPROM的 |
| 文件頁(yè)數(shù)： | 34/39頁(yè) |
| 文件大小： | 728K |
| 代理商： | AM29F200BT-90DTE1 |
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34
Am29F002B/Am29F002NB
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1.
Typical program and erase times assume the following conditions: 25×C, 5.0 V V
CC
, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, V
CC
= 4.5 V (4.75 V for ±5% devices), 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle sequence for the program command. See Table 5
for further information on command definitions.
6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 5.0 V, one pin at a time. RESET# not available on Am29F002NB.
TSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
1
8
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
7
s
Byte Programming Time
7
300
μs
Excludes system level
overhead (Note 5)
Chip Programming Time (Note 3)
1.8
5.4
s
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F200BT-90DTI1 | 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to IRFB4310 with Lead Free Packaging |
| AM29F200BT-90DWC1 | 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF3710 with Standard Packaging |
| AM29F200BT-90DWE1 | 20V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRLU3715Z with Standard Packaging |
| AM29F200BT-90DWI1 | EEPROM |
| AM29F200BT-90EC | 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRL2703S with Lead Free Packaging |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F200BT-90SC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BT-90SI | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 90ns 44-Pin SO |
| AM29F200BT-90SI\\T | 制造商:Spansion 功能描述:AM29F200BT-90SI\\T - Tape and Reel |
| AM29F200BT-90SI\T | 制造商:Spansion 功能描述:AM29F200BT-90SI\T - Tape and Reel |
| AM29F400AB-120DGC1 | 制造商:Spansion 功能描述:4M FLASH KNOWN GOOD DIE W/ TOP BOOT (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
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