- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366426 > AM29F040B-55PK (Advanced Micro Devices, Inc.) 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory PDF資料下載
參數(shù)資料
| 型號： | AM29F040B-55PK |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 4兆位（512畝× 8位）的CMOS 5.0伏只，統(tǒng)一部門快閃記憶體 |
| 文件頁數(shù)： | 17/36頁 |
| 文件大?。?/td> | 534K |
| 代理商： | AM29F040B-55PK |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁當(dāng)前第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁
November 1, 2006 21445E5
Am29F040B
15
D A T A S H E E T
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete,
or whether the device has entered the Erase Suspend
mode. Toggle Bit I may be read at any address, and is
valid after the rising edge of the final WE# pulse in the
command sequence (prior to the program or erase op-
eration), and during the sector erase time-out.
During an Embedded Program or Erase algorithm op-
eration, successive read cycles to any address cause
DQ6 to toggle. (The system may use either OE# or
CE# to control the read cycles.) When the operation is
complete, DQ6 stops toggling.
After an erase command sequence is written, if all sec-
tors selected for erasing are protected, DQ6 toggles for
approximately 100 μs, then returns to reading array
data. If not all selected sectors are protected, the Em-
bedded Erase algorithm erases the unprotected
sectors, and ignores the selected sectors that are
protected.
The system can use DQ6 and DQ2 together to deter-
mine whether a sector is actively erasing or is erase-
suspended. When the device is actively erasing (that is,
the Embedded Erase algorithm is in progress), DQ6
toggles. When the device enters the Erase Suspend
mode, DQ6 stops toggling. However, the system must
also use DQ2 to determine which sectors are erasing
or erase-suspended. Alternatively, the system can use
DQ7 (see the subsection on
“DQ7: Data# Polling”
).
If a program address falls within a protected sector,
DQ6 toggles for approximately 2 μs after the program
command sequence is written, then returns to reading
array data.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded Pro-
gram algorithm is complete.
The Write Operation Status table shows the outputs for
Toggle Bit I on DQ6. Refer to Figure
4
for the toggle bit
algorithm, and to the Toggle Bit Timings figure in the
“AC Characteristics”
section for the timing diagram.
The DQ2 vs. DQ6 figure shows the differences be-
tween DQ2 and DQ6 in graphical form. See also the
subsection on
“DQ2: Toggle Bit II”
.
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indi-
cates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for era-
sure. (The system may use either OE# or CE# to
control the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erase-sus-
pended. DQ6, by comparison, indicates whether the
device is actively erasing, or is in Erase Suspend, but
cannot distinguish which sectors are selected for era-
sure. Thus, both status bits are required for sector and
mode information. Refer to Table
5
to compare outputs
for DQ2 and DQ6.
Figure
4
shows the toggle bit algorithm in flowchart
form, and the section
“DQ2: Toggle Bit II”
explains the
algorithm. See also the
“DQ6: Toggle Bit I”
subsection.
Refer to the Toggle Bit Timings figure for the toggle bit
timing diagram. The DQ2 vs. DQ6 figure shows the dif-
ferences between DQ2 and DQ6 in graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to Figure
4
for the following discussion. When-
ever the system initially begins reading toggle bit
status, it must read DQ7–DQ0 at least twice in a row to
determine whether a toggle bit is toggling. Typically, a
system would note and store the value of the toggle bit
after the first read. After the second read, the system
would compare the new value of the toggle bit with the
first. If the toggle bit is not toggling, the device has com-
pleted the program or erase operation. The system can
read array data on DQ7–DQ0 on the following read
cycle.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the sys-
tem also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is toggling,
since the toggle bit may have stopped toggling just as
DQ5 went high. If the toggle bit is no longer toggling,
the device has successfully completed the program or
erase operation. If it is still toggling, the device did not
complete the operation successfully, and the system
must write the reset command to return to reading
array data.
The remaining scenario is that the system initially de-
termines that the toggle bit is toggling and DQ5 has not
gone high. The system may continue to monitor the
toggle bit and DQ5 through successive read cycles, de-
termining the status as described in the previous
paragraph. Alternatively, it may choose to perform
other system tasks. In this case, the system must start
at the beginning of the algorithm when it returns to de-
termine the status of the operation (top of Figure
4
).
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under
these conditions DQ5 produces a “1.” This is a failure
condition that indicates the program or erase cycle was
not successfully completed.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F040B-70EC | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040B-70ED | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040B-70EE | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040B-70EF | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040B-90JF | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F040B-70ED | 制造商:Spansion 功能描述:IC SM FLASH 5V 4MB 制造商:Spansion 功能描述:IC, SM, FLASH, 5V, 4MB |
| AM29F040B-70ED | 制造商:Spansion 功能描述:FLASH MEMORY IC |
| AM29F040B-70ED\T | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K x 8bit 70ns 32-Pin TSOP T/R |
| AM29F040B-70EE | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K x 8bit 70ns 32-Pin TSOP |
| AM29F040B-70EF | 功能描述:閃存 4M (512Kx8) 70ns 5v Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。