參數(shù)資料
型號(hào)： AM29F032B-150SE
廠商： SPANSION LLC
元件分類： PROM
英文描述： 4M X 8 FLASH 5V PROM, 150 ns, PDSO44
封裝： MO-180AA, SOP-44
文件頁(yè)數(shù)： 34/41頁(yè)
文件大小： 1511K
代理商： AM29F032B-150SE
4
Am29F032B
GENERAL DESCRIPTION
The Am29F032B is a 32 Mbit, 5.0 volt-only Flash
memory organized as 4,194,304 bytes of 8 bits each.
The 4 Mbytes of data are divided into 64 sectors of 64
Kbytes each for flexible erase capability. The 8 bits of
data appear on DQ0–DQ7. The Am29F032B is offered
in 40-pin TSOP and 44-pin SO packages. The
Am29F032B is manufactured using AMD’s 0.32 m
process technology. This device is designed to be pro-
grammed in-system with the standard system 5.0 volt
VCC supply. A 12.0 volt VPP is not required for program
or erase operations. The device can also be pro-
grammed in standard EPROM programmers.
The standard device offers access times of 70, 90,
120, and 150 ns, allowing high-speed microproces-
sors to operate without wait states. To eliminate bus
contention, the device has separate chip enable
(CE#), write enable (WE#), and output enable (OE#)
controls.
The device is entirely command set compatible with
the JEDEC single-power-supply Flash standard. Com-
mands are written to the command register using stan-
dard microprocessor write timings. Register contents
serve as input to an internal state machine that con-
trols the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for
the programming and erase operations. Reading data
out of the device is similar to reading from 12.0 volt
Flash or EPROM devices.
The device is programmed by executing the program
command sequence. This invokes the Embedded Pro-
gram algorithm—an internal algorithm that automati-
cally times the program pulse widths and verifies
proper cell margin. The device is erased by executing
the erase command sequence. This invokes the Em-
bedded Erase algorithm—an internal algorithm that
automatically preprograms the array (if it is not already
programmed) before executing the erase operation.
During erase, the device automatically times the erase
pulse widths and verifies proper cell margin.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. A sector is typically
erased and verified within one second. The device is
erased when shipped from the factory.
The hardware sector group protection feature disables
both program and erase operations in any combina-
tion of the eight sector groups of memory. A sector
group consists of four adjacent sectors.
The Erase Suspend feature enables the system to put
erase on hold for any period of time to read data from,
or program data to, a sector that is not being erased.
True background erase can thus be achieved.
The device requires only a single 5.0 volt power sup-
ply for both read and write functions. Internally gener-
ated and regulated voltages are provided for the
program and erase operations. A low VCC detector au-
tomatically inhibits write operations during power tran-
sitions. The host system can detect whether a
program or erase cycle is complete by using the
RY/BY# pin, the DQ7 (Data# Polling) or DQ6 (toggle)
status bits. After a program or erase cycle has been
completed, the device automatically returns to the
read mode.
A hardware RESET# pin terminates any operation in
progress. The internal state machine is reset to the
read mode. The RESET# pin may be tied to the sys-
tem reset circuitry. Therefore, if a system reset occurs
during either an Embedded Program or Embedded
Erase algorithm, the device is automatically reset to
the read mode. This enables the system’s microproces-
sor to read the boot-up firmware from the Flash mem-
ory.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
h ighe st l ev els of qua lity, reli abi lity, and c os t
effectiveness. The device electrically erases all bits
within a sector simultaneously via Fowler-Nordheim
tunneling. The bytes are programmed one byte at
a time using the programming mechanism of hot
electron injection.
相關(guān)PDF資料
PDF描述
AM29F032B-75FC 4M X 8 FLASH 5V PROM, 70 ns, PDSO40
AM29F080-120SEB 1M X 8 FLASH 5V PROM, 120 ns, PDSO44
AM29F080-150EEB 1M X 8 FLASH 5V PROM, 150 ns, PDSO40
Am29F100B-120DGI Hex Inverters 14-TSSOP -40 to 85
Am29F100B-120DPC Hex Inverters 14-TSSOP -40 to 85
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F032B75ED 制造商:Advanced Micro Devices 功能描述:
AM29F032B-75EF 制造商:Spansion 功能描述: 制造商:Spansion 功能描述:32M (4M X 8-BIT) 5V FLSH SCTR 制造商:Spansion 功能描述:IC, FLASH MEM, 32MBIT, 75NS, 40-TSOP, Memory Type:Flash - NOR, Memory Size:32Mbi
AM29F032B-75EF\\T 制造商:Spansion 功能描述:32M (4MX8) 5V, UNIFORM SECTOR, TSOP40, IND, HAZMAT TR - Tape and Reel
AM29F032B-75EF\T 制造商:Spansion 功能描述:32M (4MX8) 5V, UNIFORM SECTOR, TSOP40, IND, HAZMAT TR - Tape and Reel
AM29F032B-75SF 功能描述:閃存 32M (4MX8) 75ns 5v Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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