參數(shù)資料
型號(hào)： Am29F004B-B-70JI
廠商： Advanced Micro Devices, Inc.
英文描述： 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
中文描述： 4兆位（512畝× 8位）的CMOS 5.0伏，只引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù)： 10/37頁(yè)
文件大?。?/td> 993K
代理商： AM29F004B-B-70JI
8
Am29F004B
8/5/05
A D V A N C E I N F O R M A T I O N
DEVICE BUS OPERATIONS
This section describes the requirements and use of the
device bus operations, which are initiated through the internal
command register. The command register itself does not
occupy any addressable memory location. The register is
composed of latches that store the commands, along with the
address and data information needed to execute the com-
mand. The contents of the register serve as inputs to the
internal state machine. The state machine outputs dictate the
function of the device. The appropriate device bus operations
table lists the inputs and control levels required, and the
resulting output. The following subsections describe each of
these operations in further detail.
Table 1. Am29F004B Device Bus Operations
Legend:
L = Logic Low = V
IL
, H = Logic High = V
IH
, V
ID
= 12.0 ± 0.5 V, X = Don’t Care, D
IN
= Data In, D
OUT
= Data Out, A
IN
= Address In
Note:
See the sections on Sector Protection and Temporary Sector
Unprotect for more information.
Requirements for Reading Array Data
To read array data from the outputs, the system must drive
the CE# and OE# pins to V
IL
. CE# is the power control and
selects the device. OE# is the output control and gates array
data to the output pins. WE# should remain at V
IH
.
The internal state machine is set for reading array data upon
device power-up. This ensures that no spurious alteration of
the memory content occurs during the power transition. No
command is necessary in this mode to obtain array data.
Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid data
on the device data outputs. The device remains enabled for
read access until the command register contents are altered.
See
Reading Array Data on page 13
for more information.
Refer to the AC Read Operations table for timing specifica-
tions and to the Read Operations Timings diagram for the
timing waveforms. I
CC1
in the DC Characteristics table repre-
sents the active current specification for reading array data.
Writing Commands/Command Sequences
To write a command or command sequence (which includes
programming data to the device and erasing sectors of
memory), the system must drive WE# and CE# to V
IL
, and
OE# to V
IH
.
An erase operation can erase one sector, multiple sectors, or
the entire device. The Sector Address Tables indicate the
address space that each sector occupies. A “sector address”
consists of the address bits required to uniquely select a
sector. See the
Command Definitions on page 13
section for
details on erasing a sector or the entire chip, or sus-
pending/resuming the erase operation.
After the system writes the autoselect command sequence,
the device enters the autoselect mode. The system can then
read autoselect codes from the internal register (which is
separate from the memory array) on DQ7–DQ0. Standard
read cycle timings apply in this mode. Refer to the
Autoselect
Mode on page 10
and Autoselect Command Sequence sec-
tions for more information.
I
CC2
in the DC Characteristics table represents the active
current specification for the write mode. The
AC
Characteristics on page 24
section contains timing specifica-
tion tables and timing diagrams for write operations.
Program and Erase Operation Status
During an erase or program operation, the system may check
the status of the operation by reading the status bits on DQ7–
DQ0. Standard read cycle timings and I
CC
read specifications
apply. Refer to
Write Operation Status on page 17
for more
information, and to each AC Characteristics section for timing
diagrams.
Standby Mode
When the system is not reading or writing to the device, it can
place the device in the standby mode. In this mode, current
consumption is greatly reduced, and the outputs are placed
in the high impedance state, independent of the OE# input.
The device enters the CMOS standby mode when CE# pin is
held at V
CC
±
0.5 V. (Note that this is a more restricted voltage
range than V
IH
.) The device enters the TTL standby mode
when CE# pin is held at V
IH
. The device requires standard
access time (t
CE
) for read access when the device is in either
of these standby modes, before it is ready to read data.
If the device is deselected during erasure or programming,
the device draws active current until the operation is
completed.
In the DC Characteristics tables, I
CC3
represents the standby
current specification.
Operation
CE#
L
L
OE#
L
H
X
X
H
X
WE#
H
L
X
X
H
X
A0–A18
A
IN
A
IN
X
X
X
X
DQ0–DQ7
D
OUT
D
IN
High-Z
High-Z
High-Z
X
Read
Write
CMOS Standby
TTL Standby
Output Disable
Temporary Sector Unprotect (See Note)
V
CC
± 0.5 V
H
L
X
相關(guān)PDF資料
PDF描述
Am29F004B-T-70JE 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
Am29F004B-T-70JF 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
Am29F004B-B-70JK 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
Am29F004B-T-70JI 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
Am29F004B-T-70JK 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F010 制造商:Panasonic Industrial Company 功能描述:IC
AM29F010-120DGC1 制造商:Spansion 功能描述:1M FLASH KNOWN GOOD DIE (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film
AM29F010-120DGE1 制造商:Spansion 功能描述:1M FLASH KNOWN GOOD DIE (EXTEND TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film
AM29F010-120DGI1 制造商:Spansion 功能描述:1M FLASH KNOWN GOOD DIE (INDUSTRIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film
AM29F010-120JC 制造商:Advanced Micro Devices 功能描述: 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 8, 32 Pin, Plastic, PLCC 制造商:Analog Devices 功能描述:NOR Flash, 128K x 8, 32 Pin, Plastic, PLCC
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*