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參數(shù)資料
| 型號： | Am29F004B-B-70JF |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 4兆位（512畝× 8位）的CMOS 5.0伏，只引導扇區(qū)閃存 |
| 文件頁數(shù)： | 23/37頁 |
| 文件大?。?/td> | 993K |
| 代理商： | AM29F004B-B-70JF |
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8/5/05
Am29F004B
21
A D V A N C E I N F O R M A T I O N
DC CHARACTERISTICS
TTL/NMOS Compatible
Notes:
1.
2.
Maximum I
CC
specifications are tested with V
CC
= V
CCmax
.
The I
CC
current listed is typically less than 2 mA/MHz, with OE#
at V
IH
.
3.
I
CC
active while Embedded Erase or Embedded Program is in
progress.
Not 100% tested.
4.
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
max
±
1.0
μA
I
LIT
A9, OE# Input Load Current
(Note 4)
V
CC
= V
CC max
;
A9, OE# = 12.5 V
50
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC max
±
1.0
μA
I
CC1
V
CC
Active Read Current (Notes 1, 2)
CE# = V
IL
,
OE#
=
V
IH
20
30
mA
I
CC2
V
CC
Active Write Current (Notes 1, 3, 4)
CE# = V
IL
, OE# = V
IH
30
40
mA
I
CC3
V
CC
Standby Current (Note 1)
CE#, OE# = V
IH
0.4
1
mA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
2.0
V
CC
+ 0.5
V
V
ID
Voltage for Autoselect and Temporary Sector
Unprotect
V
CC
= 5.0 V
11.5
12.5
V
V
OL
Output Low Voltage
I
OL
= 12 mA, V
CC
= V
CC min
0.45
V
V
OH
Output High Voltage
I
OH
= –2.5 mA, V
CC
= V
CC min
2.4
V
V
LKO
Low V
CC
Lock-Out Voltage
3.2
4.2
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am29F004B-B-70JI | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| Am29F004B-T-70JE | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| Am29F004B-T-70JF | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| Am29F004B-B-70JK | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| Am29F004B-T-70JI | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
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