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參數(shù)資料
| 型號(hào)： | Am29F004B-B-70JF |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 4兆位（512畝× 8位）的CMOS 5.0伏，只引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 14/37頁 |
| 文件大?。?/td> | 993K |
| 代理商： | AM29F004B-B-70JF |
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12
Am29F004B
8/5/05
A D V A N C E I N F O R M A T I O N
Temporary Sector Unprotect
This feature allows temporary unprotection of previously pro-
tected sectors to change data in-system. The Sector
Unprotect mode is activated by setting the OE# pin to 12.0
Volts (V
ID
).
Figure 2
shows the algorithm, and
Figure 16, on
page 28
and
Figure 17, on page 28
show the timing dia-
grams, for this feature. While OE# is at V
ID
, the sector unlock
sequence is written to the device. After the sector unlock
sequence is written, the OE# pin is taken back to V
IH
. The
device is now in the temporary sector unprotect mode.
While in this mode, formerly protected sectors can be pro-
grammed or erased by selecting the appropriate sector
address during programming or erase operations. Either
sector erase or chip erase operations can be performed in
this mode. Byte program operations require only two cycles,
while sector and chip erase operations only require four
cycles. Refer to the Command Definitions table.
Exiting the temporary sector unprotect mode is accomplished
by either removing V
CC
from the device or by taking OE#
back to V
ID
and writing the sector relock sequence.
After writing the sector relock sequence, the OE# pin is taken
back to V
IH
and all previously protected sectors are protected
again.
Figure 2. Temporary Sector Unprotect Operation
Write the three-cycle
Unlock sequence with com-
mand 20h (Figure 16)
Perform Erase or
Program Operations
OE# = V
IH
Temporary Sector
Unprotect
Completed (Note 2)
OE# = V
IH
(Note 1)
Notes:
1.
2.
All protected sectors unprotected.
All previously protected sectors are protected once again.
START
OE# = V
ID
OE# = V
ID
Write the two-cycle
Sector Relock sequence (Fig-
ure 17)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am29F004B-B-70JI | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| Am29F004B-T-70JE | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| Am29F004B-T-70JF | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| Am29F004B-B-70JK | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| Am29F004B-T-70JI | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F010 | 制造商:Panasonic Industrial Company 功能描述:IC |
| AM29F010-120DGC1 | 制造商:Spansion 功能描述:1M FLASH KNOWN GOOD DIE (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F010-120DGE1 | 制造商:Spansion 功能描述:1M FLASH KNOWN GOOD DIE (EXTEND TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F010-120DGI1 | 制造商:Spansion 功能描述:1M FLASH KNOWN GOOD DIE (INDUSTRIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F010-120JC | 制造商:Advanced Micro Devices 功能描述: 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 8, 32 Pin, Plastic, PLCC 制造商:Analog Devices 功能描述:NOR Flash, 128K x 8, 32 Pin, Plastic, PLCC |
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