參數(shù)資料
型號(hào)： AM29DS323DB50EI
廠商： Advanced Micro Devices, Inc.
英文描述： 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
中文描述： 32兆位（4個(gè)M × 8位/ 2米x 16位），1.8伏的CMOS只，同時(shí)作業(yè)快閃記憶體
文件頁數(shù)： 5/56頁
文件大?。?/td> 641K
代理商： AM29DS323DB50EI
October10,2006 23480A5
Am29DS323D
3
D A T A S H E E T
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 5
Special Handling Instructions for FBGA Package ....................6
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 8
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 9
Table 1. Am29DS323D Device Bus Operations ...............................9
Word/Byte Configuration ..........................................................9
Requirements for Reading Array Data .....................................9
Writing Commands/Command Sequences ............................10
Accelerated Program Operation ......................................................10
Autoselect Functions .......................................................................10
Simultaneous Read/Write Operations withZeroLatency .......10
Standby Mode ........................................................................10
Automatic Sleep Mode ...........................................................10
RESET#: Hardware Reset Pin ...............................................11
Output Disable Mode ..............................................................11
Table 2. Am29DS323D Device Bank Divisions ...............................11
Table 3. Top Boot Sector Addresses (Am29DS32xDT) ..................12
Table 4. Secured Silicon Sector Addresses for Top Boot Devices. 13
Table 5. Bottom Boot Sector Addresses (Am29DS32xDB) ............14
Table 6. Secured Silicon Sector Addresses for Bottom Boot Devices
15
Autoselect Mode .....................................................................16
Table 7. Am29DS323D Autoselect Codes (High VoltageMethod) 16
Sector/Sector Block Protection and Unprotection ..................17
Table 8. Top Boot Sector/Sector Block Addresses
for Protection/Unprotection .............................................................17
Table 9. Bottom Boot Sector/Sector Block
Addresses for Protection/Unprotection ...........................................17
Write Protect (WP#) ................................................................18
Temporary Sector/Sector Block Unprotect .............................18
Figure 1. Temporary Sector Unprotect Operation........................... 18
Figure 2. In-System Sector/Sector Block Protect
andUnprotectAlgorithms................................................................ 19
Secured Silicon Sector Flash MemoryRegion .......................20
Hardware Data Protection ......................................................20
Low VCC Write Inhibit .....................................................................21
Write Pulse “Glitch” Protection ........................................................21
Logical Inhibit ..................................................................................21
Power-Up Write Inhibit ....................................................................21
Common Flash Memory Interface (CFI) . . . . . . . 21
Table 10. CFI Query Identification String........................................ 21
Table 11. System Interface String................................................... 22
Table 12. Device Geometry Definition............................................ 22
Table 13. Primary Vendor-Specific Extended Query...................... 23
Command Definitions . . . . . . . . . . . . . . . . . . . . . . 24
Reading Array Data ................................................................24
Reset Command .....................................................................24
Autoselect Command Sequence ............................................24
Enter Secured Silicon Sector/Exit Secured Silicon Sector
CommandSequence ..............................................................25
Byte/Word Program Command Sequence .............................25
Unlock Bypass Command Sequence ..............................................25
Figure 3. Program Operation.......................................................... 26
Chip Erase Command Sequence ...........................................26
Sector Erase Command Sequence ........................................26
Erase Suspend/Erase Resume Commands ...........................27
Figure 4. Erase Operation.............................................................. 27
Command Definitions .............................................................28
Table 14. Am29DS323D Command Definitions.............................. 28
Write Operation Status . . . . . . . . . . . . . . . . . . . . 29
DQ7: Data# Polling .................................................................29
Figure 5. Data# Polling Algorithm.................................................. 29
RY/BY#: Ready/Busy# ............................................................30
DQ6: Toggle Bit I ....................................................................30
Figure 6. Toggle Bit Algorithm........................................................ 30
DQ2: Toggle Bit II ...................................................................31
Reading Toggle Bits DQ6/DQ2 ...............................................31
DQ5: Exceeded Timing Limits ................................................31
DQ3: Sector Erase Timer .......................................................31
Table 15. Write Operation Status ...................................................32
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 33
Figure 7. Maximum Negative OvershootWaveform..................... 33
Figure 8. Maximum Positive OvershootWaveform....................... 33
Operating Ranges. . . . . . . . . . . . . . . . . . . . . . . . . 33
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 34
Figure 9. I
CC1
Current vs. Time (Showing Active and
AutomaticSleepCurrents)............................................................. 35
Figure 10. Typical I
CC1
vs. Frequency............................................ 35
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 11. Test Setup.................................................................... 36
Table 16. Test Specifications .........................................................36
Figure 12. Input Waveforms and MeasurementLevels................. 36
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 13. Read Operation Timings............................................... 37
Figure 14. Reset Timings............................................................... 38
Word/Byte Configuration (BYTE#) ..........................................39
Figure 15. BYTE# Timings for Read Operations............................ 39
Figure 16. BYTE# Timings for Write Operations............................ 39
Erase and Program Operations ..............................................40
Figure 17. Program Operation Timings.......................................... 41
Figure 18. Accelerated Program Timing Diagram.......................... 41
Figure 19. Chip/Sector Erase Operation Timings.......................... 42
Figure 20. Back-to-back Read/Write Cycle Timings...................... 43
Figure 21. Data# Polling Timings (During EmbeddedAlgorithms). 44
Figure 22. Toggle Bit Timings (During EmbeddedAlgorithms)...... 45
Figure 23. DQ2 vs. DQ6................................................................. 45
Figure 24. Temporary Sector/Sector Block
UnprotectTimingDiagram............................................................. 46
Figure 25. Sector/Sector Block Protect/UnprotectTimingDiagram 47
Figure 26. Alternate CE# Controlled Write
(Erase/Program)OperationTimings.............................................. 49
Erase And Programming Performance . . . . . . . 50
Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 50
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
FBD048—48-ball Fine-Pitch Ball Grid Array (FBGA)
6x12mm package ................................................................51
TS 048—48-Pin Standard TSOP ............................................52
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 53
相關(guān)PDF資料
PDF描述
AM29DS323DB50EIN 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DS323DB50WMI 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DS323DB50WMIN 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DS323DT50EI 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DS323DT50EIN 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
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