參數(shù)資料
型號(hào)： AM29DS323DB50EI
廠商： Advanced Micro Devices, Inc.
英文描述： 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
中文描述： 32兆位（4個(gè)M × 8位/ 2米x 16位），1.8伏的CMOS只，同時(shí)作業(yè)快閃記憶體
文件頁(yè)數(shù)： 30/56頁(yè)
文件大小： 641K
代理商： AM29DS323DB50EI
28
Am29DS323D
23480A5 October10,2006
D A T A S H E E T
Command Definitions
Table 14.
Am29DS323D Command Definitions
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses
latch on the falling edge of the WE# or CE# pulse, whichever happens
later.
PD = Data to be programmed at location PA. Data latches on the rising
edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A20–A12 uniquely select any sector.
BA = Address of the bank that is being switched to autoselect mode, is
in bypass mode, or is being erased.
Notes:
1.
2.
3.
See
Table 1
for description of bus operations.
All values are in hexadecimal.
Except for the read cycle and the fourth cycle of the autoselect
command sequence, all bus cycles are write cycles.
Data bits DQ15–DQ8 are don’t care in command sequences,
except for RD and PD.
Unless otherwise noted, address bits A20–A11 are don’t cares.
No unlock or command cycles required when bank is in read
mode.
The Reset command is required to return to reading array data
(or to the erase-suspend-read mode if previously in Erase
Suspend) when a bank is in the autoselect mode, or if DQ5 goes
high (while the bank is providing status information).
The fourth cycle of the autoselect command sequence is a read
cycle. The system must provide the bank address to obtain the
manufacturer ID, device ID, or Secured Silicon Sector factory
protect information. Data bits DQ15–DQ8 are don’t care. See the
Autoselect Command Sequence section for more information.
4.
5.
6.
7.
8.
9.
10. The data is 00h for an unprotected sector/sector block and 01h for
a protected sector/sector block.
11. The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
12. The Unlock Bypass Reset command is required to return to
reading array data when the bank is in the unlock bypass mode.
13. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation, and requires the bank address.
14. The Erase Resume command is valid only during the Erase
Suspend mode, and requires the bank address.
The data is 85h for factory locked and 05h for not factory locked.
15. Command is valid when device is ready to read array data or when
device is in autoselect mode.
Command
Sequence
(Note 1)
C
Bus Cycles (Notes 2–5)
Third
Addr
Data
First
Second
Addr
Fourth
Fifth
Sixth
Addr Data
RA
XXX
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
XXX
BA
555
AAA
555
AAA
BA
BA
55
AA
Data
Addr
Data
Addr
Data
Addr
Data
Read
(Note 6)
Reset
(Note 7)
1
1
RD
F0
A
(
Manufacturer ID
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
4
AA
2AA
555
2AA
555
2AA
555
2AA
555
2AA
555
2AA
555
2AA
555
2AA
555
PA
XXX
2AA
555
2AA
555
55
(BA)555
(BA)AAA
(BA)555
(BA)AAA
(BA)555
(BA)AAA
(BA)555
(BA)AAA
555
AAA
555
AAA
555
AAA
555
AAA
90
(BA)X00
01
Device ID
4
AA
55
90
(BA)X01
(BA)X02
(BA)X03
(BA)X06
(SA)X02
(SA)X04
(
Table 7
)
Secured Silicon Sector
Factory Protect
(Note 9)
4
AA
55
90
85/05
Sector Protect Verify
(Note
10)
4
AA
55
90
00/01
Enter Secured Silicon Sector
Region
3
AA
55
88
Exit Secured Silicon Sector
Region
4
AA
55
90
XXX
00
Program
4
AA
55
A0
PA
PD
Unlock Bypass
3
AA
55
20
Unlock Bypass Program
(Note 11)
Unlock Bypass Reset
(Note 12)
2
2
A0
90
PD
00
Chip Erase
Word
Byte
Word
Byte
6
AA
55
555
AAA
555
AAA
80
555
AAA
555
AAA
AA
2AA
555
2AA
555
55
555
AAA
10
Sector Erase
6
AA
55
80
AA
55
SA
30
Erase Suspend
(Note 13)
Erase Resume
(Note 14)
1
1
B0
30
CFI Query
(Note 15)
Word
Byte
1
98
相關(guān)PDF資料
PDF描述
AM29DS323DB50EIN 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
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