參數(shù)資料
型號： AM29DL324DB120EE
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
中文描述： 2M X 16 FLASH 3V PROM, 120 ns, PDSO48
封裝： MO-142DD, TSOP-48
文件頁數(shù)： 4/56頁
文件大小： 649K
代理商： AM29DL324DB120EE
December 13, 2005
Am29DL322D/323D/324D
3
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 6
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 7
Special Handling Instructions for FBGA Package ..........................8
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 9
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 10
Word/Byte Configuration ..............................................................10
Requirements for Reading Array Data .........................................10
Writing Commands/Command Sequences ..................................11
Simultaneous Read/Write Operations
with ZeroLatency .........................................................................11
Standby Mode ..............................................................................11
Automatic Sleep Mode .................................................................11
RESET#: Hardware Reset Pin .....................................................12
Output Disable Mode ...................................................................12
Autoselect Mode ..........................................................................17
Sector/Sector Block Protection and Unprotection ........................18
Write Protect (WP#) .....................................................................19
Temporary Sector Unprotect ........................................................19
Figure 1. Temporary Sector Unprotect Operation................................. 19
Figure 2. In-System Sector Protection/
Sector Unprotection Algorithms............................................................ 20
SecSi
TM
(Secured Silicon) Sector
Flash MemoryRegion ..................................................................21
Hardware Data Protection ............................................................22
Common Flash Memory Interface (CFI) . . . . . . . 22
Command Definitions . . . . . . . . . . . . . . . . . . . . . . 25
Reading Array Data ......................................................................25
Reset Command ..........................................................................26
Autoselect Command Sequence ..................................................26
Enter SecSi
TM
Sector/Exit SecSi Sector
Command Sequence ...................................................................26
Byte/Word Program Command Sequence ...................................26
Figure 3. Program Operation................................................................ 27
Chip Erase Command Sequence .................................................27
Sector Erase Command Sequence ..............................................28
Erase Suspend/Erase Resume Commands ................................28
Figure 4. Erase Operation..................................................................... 29
Write Operation Status . . . . . . . . . . . . . . . . . . . . . 31
DQ7: Data# Polling ......................................................................31
Figure 5. Data# Polling Algorithm......................................................... 31
RY/BY#: Ready/Busy# .................................................................32
DQ6: Toggle Bit I ..........................................................................32
Figure 6. Toggle Bit Algorithm.............................................................. 32
DQ2: Toggle Bit II .........................................................................33
Reading Toggle Bits DQ6/DQ2 ....................................................33
DQ5: Exceeded Timing Limits ......................................................33
DQ3: Sector Erase Timer .............................................................33
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 35
Figure 7. Maximum Negative OvershootWaveform............................. 35
Figure 8. Maximum Positive OvershootWaveform.............................. 35
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 9. I
CC1
Current vs. Time (Showing Active and
AutomaticSleepCurrents).................................................................... 37
Figure 10. Typical I
vs. Frequency................................................... 37
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 11. Test Setup.......................................................................... 38
Figure 12. Input Waveforms and Measurement Levels........................ 38
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 13. Read Operation Timings...................................................... 39
Figure 14. Reset Timings...................................................................... 40
Word/Byte Configuration (BYTE#) ...............................................41
Figure 15. BYTE# Timings for Read Operations.................................. 41
Figure 16. BYTE# Timings for Write Operations.................................. 41
Erase and Program Operations ...................................................42
Figure 17. Program Operation Timings................................................ 43
Figure 18. Accelerated Program Timing Diagram................................ 43
Figure 19. Chip/Sector Erase Operation Timings................................. 44
Figure 20. Back-to-back Read/Write Cycle Timings............................. 45
Figure 21. Data# Polling Timings (During EmbeddedAlgorithms)....... 45
Figure 22. Toggle Bit Timings (During EmbeddedAlgorithms)............ 46
Figure 23. DQ2 vs. DQ6....................................................................... 46
Temporary Sector Unprotect ........................................................47
Figure 24. Temporary Sector Unprotect Timing Diagram..................... 47
Figure 25. Sector/Sector Block Protect and Unprotect TimingDiagram 48
Alternate CE# Controlled Erase and ProgramOperations ...........49
Figure 26. Alternate CE# Controlled Write (Erase/Program)
OperationTimings................................................................................ 50
Erase And Programming Performance . . . . . . . 51
Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 51
TSOP And SO Pin Capacitance. . . . . . . . . . . . . . 51
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 52
FBD063—63-ball Fine-Pitch Ball Grid Array (FBGA)8x14mm .52
TS 048—48-Pin Standard TSOP .................................................53
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 54
相關(guān)PDF資料
PDF描述
AM29DL324DT120EE 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL323DT120 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL322D 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL322DB120 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL322DB70R 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
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