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| 型號： | AM29DL324DB120EE |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | 2M X 16 FLASH 3V PROM, 120 ns, PDSO48 |
| 封裝： | MO-142DD, TSOP-48 |
| 文件頁數(shù)： | 2/56頁 |
| 文件大小： | 649K |
| 代理商： | AM29DL324DB120EE |
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Publication#
21534
Issue Date:
December 13, 2005
Rev:
D
Amendment/
+8
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29DL322D/323D/324D
32 Megabit (4 M x 8-Bit/2 M x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■
Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in other bank.
— Zero latency between read and write operations
■
Multiple bank architectures
— Three devices available with different bank sizes
(refer to Table 3)
■
SecSi
TM
(Secured Silicon) Sector
— Current version of device has 64 Kbytes; future
versions will have 256 bytes
—
Factory locked and identifiable:
16 bytes available for
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data
—
Customer lockable:
Can be read, programmed, or
erased just like other sectors. Once locked, data
cannot be changed
■
Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero.
■
Package options
— 63-ball FBGA
— 48-pin TSOP
■
Top or bottom boot block
■
Manufactured on 0.23 μm process technology
■
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
PERFORMANCE CHARACTERISTICS
■
High performance
— Access time as fast 70 ns
— Program time: 7 μs/word typical utilizing Accelerate
function
■
Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
■
Minimum 1 million write cycles guaranteed per
sector
■
20 year data retention at 125°C
— Reliable operation for the life of the system
SOFTWARE FEATURES
■
Data Management Software (DMS)
— AMD-supplied software manages data programming,
enabling EEPROM emulation
— Eases historical sector erase flash limitations
■
Supports Common Flash Memory Interface (CFI)
■
Erase Suspend/Erase Resume
— Suspends erase operations to allow programming in
same bank
■
Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
■
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
HARDWARE FEATURES
■
Any combination of sectors can be erased
■
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
■
Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to the read mode
■
WP#/ACC input pin
— Write protect (WP#) function allows protection of two
outermost boot sectors, regardless of sector protect
status
— Acceleration (ACC) function accelerates program
timing
■
Sector protection
— Hardware method of locking a sector, either
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
This product has been retired and is not available for designs. For new and current designs involving TSOP packages, S29JL032H supersedes Am29DL32xD and is the factory-recom-
mended migration path. Please refer to the S29JL032H Datasheet for specifications and ordering information.
For new and current designs involving Fine-pitch BGA (FBGA) packages, S29PL032J supersedes Am29DL32xD and is the factory-recommended migration path. Please refer to the
S29PL032J Datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
相關PDF資料 |
PDF描述 |
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| AM29DL324DT120EE | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL323DT120 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL322D | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL322DB120 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL322DB70R | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM29DL324GB-70EI | 制造商:Advanced Micro Devices 功能描述:2M X 16 FLASH 3V PROM, 70 ns, 48 Pin Plastic SMT |
| AM29DL400BB70EC | 制造商:AMD 功能描述:* 制造商:Advanced Micro Devices 功能描述: |
| AM29DL400BB90EC | 制造商:AMD 功能描述:NEW |
| AM29DL640G70EI | 制造商:Advanced Micro Devices 功能描述: |
| AM29DL800BB-120WBD | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 8Mbit 1M/512K x 8bit/16bit 120ns 48-Pin FBGA |
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