參數(shù)資料
型號: AM29DL323DT120
廠商: Advanced Micro Devices, Inc.
英文描述: 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
中文描述: 32兆位(4個M × 8位/ 2米x 16位),3.0伏的CMOS只,同時(shí)作業(yè)快閃記憶體
文件頁數(shù): 2/54頁
文件大?。?/td> 629K
代理商: AM29DL323DT120
Publication#
21534
Issue Date:
June 10, 2003
Rev:
D
Amendment/
+6
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29DL322D/323D/324D
32 Megabit (4 M x 8-Bit/2 M x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in other bank.
— Zero latency between read and write operations
Multiple bank architectures
— Three devices available with different bank sizes
(refer to Table 3)
SecSi
(Secured Silicon) Sector
— Current version of device has 64 Kbytes; future
versions will have 256 bytes
Factory locked and identifiable:
16 bytes available for
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data
Customer lockable:
Can be read, programmed, or
erased just like other sectors. Once locked, data
cannot be changed
Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero.
Package options
— 63-ball FBGA
— 48-pin TSOP
Top or bottom boot block
Manufactured on 0.23 μm process technology
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
PERFORMANCE CHARACTERISTICS
High performance
— Access time as fast 70 ns
— Program time: 7 μs/word typical utilizing Accelerate
function
Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
Minimum 1 million write cycles guaranteed per
sector
20 year data retention at 125
°
C
— Reliable operation for the life of the system
SOFTWARE FEATURES
Data Management Software (DMS)
— AMD-supplied software manages data programming,
enabling EEPROM emulation
— Eases historical sector erase flash limitations
Supports Common Flash Memory Interface (CFI)
Erase Suspend/Erase Resume
— Suspends erase operations to allow programming in
same bank
Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
HARDWARE FEATURES
Any combination of sectors can be erased
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to the read mode
WP#/ACC input pin
— Write protect (WP#) function allows protection of two
outermost boot sectors, regardless of sector protect
status
— Acceleration (ACC) function accelerates program
timing
Sector protection
— Hardware method of locking a sector, either
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
相關(guān)PDF資料
PDF描述
AM29DL322D 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL322DB120 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL322DB70R 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL322DB90 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL322DT120 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
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