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參數(shù)資料
| 型號(hào)： | AM29BDS64HE8VMI |
| 廠商： | Spansion Inc. |
| 英文描述： | 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 128或64兆位（8米或4個(gè)M x 16位）的CMOS 1.8伏，只有同時(shí)讀/寫(xiě)，突發(fā)模式閃存 |
| 文件頁(yè)數(shù)： | 83/89頁(yè) |
| 文件大?。?/td> | 913K |
| 代理商： | AM29BDS64HE8VMI |
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May 10, 2006 27024B3
Am29BDS128H/Am29BDS640H
81
D A T A S H E E T
AC CHARACTERISTICS
Notes:
1. RDY active with data (A18 = 0 in the Configuration Register).
2. RDY active one clock cycle before data (A18 = 1 in the Configuration Register).
3. Cxx indicates the clock that triggers Dxx on the outputs; for example, C60 triggers D60. Figure shows the device crossing a
bank in the process of performing an erase or program.
Figure 47.
Latency with Boundary Crossing
into Program/Erase Bank
CLK
Address (hex)
C60
C61
C62
C63
C63
C63
C64
D60
D61
D62
D63
Read Status
(stays high)
AVD#
RDY(1)
Data
OE#,
CE#
(stays low)
Address boundary occurs every 64 words, beginning at address
00003Fh: (00007Fh, 0000BFh, etc.) Address 000000h is also a boundary crossing.
3C
3D
3E
3F
3F
3F
40
latency
RDY(2)
latency
t
RACC
t
RACC
t
RACC
t
RACC
Invalid
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