參數(shù)資料
型號: AM29BDS64HD9VMI
廠商: Spansion Inc.
英文描述: 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
中文描述: 128或64兆位(8米或4個(gè)M x 16位)的CMOS 1.8伏,只有同時(shí)讀/寫,突發(fā)模式閃存
文件頁數(shù): 72/89頁
文件大小: 913K
代理商: AM29BDS64HD9VMI
70
Am29BDS128H/Am29BDS640H
27024B3 May 10, 2006
D A T A S H E E T
AC CHARACTERISTICS
Notes:
1. PA = Program Address, PD = Program Data, VA = Valid Address for reading status bits.
2. “In progress” and “complete” refer to status of program operation.
3. Amax–A12 are don’t care during command sequence unlock cycles.
4. CLK can be either V
IL
or V
IH
.
5. The Asynchronous programming operation is independent of the Set Device Read Mode bit in the Configuration Register.
Figure 34.
Asynchronous Program Operation Timings: AVD# Latched Addresses
OE#
CE#f
Data
Addresses
AVD#
WE#
CLK
V
CC
f
t
AS
t
WP
t
AH
t
WC
t
WPH
PA
t
VCS
t
CS
t
DH
t
CH
In
Progress
t
WHWH1
VA
Complete
VA
Program Command Sequence (last two cycles)
Read Status Data
t
DS
V
IH
V
IL
t
AVDP
A0h
555h
PD
相關(guān)PDF資料
PDF描述
AM29BDS64HE8VFI 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS64HE8VKI 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS64HE8VMI 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS64HE9VFI 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS64HE9VKI 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
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