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參數(shù)資料
| 型號(hào)： | AM29BDS643GT7GVAI |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44 |
| 封裝： | 9.20 X 8 MM, 0.50 MM PITCH, FBGA-44 |
| 文件頁數(shù)： | 3/49頁 |
| 文件大?。?/td> | 382K |
| 代理商： | AM29BDS643GT7GVAI |
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DATA SHEET
Publication#
25692
Revision:
A
Amendment:
2
Issue Date:
May 8, 2006
Am29BDS643G
64 Megabit (4 M x 16-Bit)
CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
DISTINCTIVE CHARACTERISTICS
■
Single 1.8 volt read, program and erase (1.7 to
1.9 volt)
■
Multiplexed Data and Address for reduced I/O
count
— A0–A15 multiplexed as D0–D15
— Addresses are latched by AVD# control input
when CE# low
■
Simultaneous Read/Write operation
— Data can be continuously read from one bank
while executing erase/program functions in other
bank
— Zero latency between read and write operations
■
Read access times at 66/54/40 MHz
— Burst access times of 11/13.5/20 ns @ 30 pF
at industrial temperature range
— Asynchronous random access times
of 55/70/70 ns @ 30 pF
— Synchronous random access times
of 71/87.5/95 ns @ 30 pF
■
Burst length
— Continuous linear burst
— 8/16/32 word linear burst with wrap around
■
Power dissipation (typical values, 8 bits
switching, C
L
= 30 pF)
— Burst Mode Read: 25 mA
— Simultaneous Operation: 40 mA
— Program/Erase: 15 mA
— Standby mode: 0.2 μA
■
Sector Architecture
— Eight 8 Kword sectors and one hundred
twenty-six 32 Kword sectors
— Banks A and B each contain four 8 Kword
sectors and thirty-one 32 Kword sectors; Banks
C and D each contain thirty-two 32 Kword
sectors
■
Sector Protection
— Software command sector locking
— WP# protects the last two boot sectors
— All sectors locked when V
PP
= V
IL
■
Handshaking feature
— Provides host system with minimum possible
latency by monitoring RDY
■
Supports Common Flash Memory
Interface (CFI)
■
Software command set compatible with JEDEC
42.4 standards
— Backwards compatible with Am29F and Am29LV
families
■
Manufactured on 0.17 μm process technology
■
Minimum 1 million erase cycle guarantee
per sector
■
20-year data retention at 125
°
C
— Reliable operation for the life of the system
■
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■
Data# Polling and toggle bits
— Provides a software method of detecting
program and erase operation completion
■
Erase Suspend/Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
■
Hardware reset input (RESET#)
— Hardware method to reset the device for reading
array data
■
CMOS compatible inputs and outputs
■
Package
— 44-ball Very Thin FBGA
This product has been retired and is not recommended for designs. For new designs, S29NS064J supersedes Am29BDS643G. Please refer to the S29NS-J family data sheet for specifi-
cations and ordering information. Availability of this document is retained for reference and historical purposes only.
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