參數(shù)資料
型號(hào): AM29BDS640GBD3WSI
廠商: SPANSION LLC
元件分類: PROM
英文描述: 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
中文描述: 4M X 16 FLASH 1.8V PROM, 14 ns, PBGA80
封裝: 11 X 12 MM, 0.80 MM PITCH, FBGA-80
文件頁數(shù): 70/77頁
文件大?。?/td> 1581K
代理商: AM29BDS640GBD3WSI
70
Am29BDS640G
25903C2 May 9, 2006
Data
Sheet
AC Characteristics
Note: Breakpoints in waveforms indicate that system may alternately read array data from the “non-busy bank” while
checking the status of the program or erase operation in the “busy” bank. The system should read status twice to ensure
valid information.
Figure 33. Back-to-Back Read/Write Cycle Timings
OE#
CE#
WE#
tOEH
Data
Addresses
AVD#
PD/30h
AAh
RA
PA/SA
tWC
tDS
tDH
tRC
tOE
tAS
tAH
tACC
tOEH
tWP
tGHWL
tOEZ
tWC
tSR/W
Last Cycle in
Program or
Sector Erase
Command Sequence
Read status (at least two cycles) in same bank
and/or array data from other bank
Begin another
write or program
command sequence
RD
RA
555h
RD
tWPH
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AM29BDS640GBD9WSI 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS640GTC3WSI 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS640GTC4WSI 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
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