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參數(shù)資料
| 型號(hào)： | AM29BDS320GTD9VMI |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 2M X 16 FLASH 1.8V PROM, 70 ns, PBGA64 |
| 封裝： | 8 X 9 MM, 0.80 MM PITCH, FBGA-64 |
| 文件頁(yè)數(shù)： | 8/74頁(yè) |
| 文件大?。?/td> | 701K |
| 代理商： | AM29BDS320GTD9VMI |
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6
Am29BDS320G
27243B1 October 1, 2003
P r e l i m i n a r y
Product Selector Guide
Notes:
1. Speed Options ending in “3” and “8” indicate the “reduced wait-state handshaking” option, which speeds initial
synchronous accesses for even addresses.
2. Speed Options ending in “4” and “9” indicate the “standard handshaking” option.
3. See the AC Characteristics section of this data sheet for full specifications.
Part Number
Am29BDS320G
Burst Frequency
54 MHz
40 MHz
Speed Option
V
CC
= 1.65 – 1.95 V,
V
IO
= 2.7 – 3.15 V
D3, D4
C3, C4
V
CC,
V
IO
= 1.65 – 1.95 V
D8, D9
C8, C9
Max Initial Synchronous Access Time, ns (t
IACC
) Reduced Wait-state
Handshaking: Even Address
87.5
95
Max Initial Synchronous Access Time, ns (t
IACC
) Reduced Wait-state
Handshaking: Odd Address; or Standard Handshaking
106
120
Max Burst Access Time, ns (t
BACC
)
13.5
20
Max Asynchronous Access Time, ns (t
ACC
)
70
90
Max CE# Access, ns (t
CE
)
Max OE# Access, ns (t
OE
)
13.5
20
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