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參數(shù)資料
| 型號： | AM29BDS320GTD9VMI |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 2M X 16 FLASH 1.8V PROM, 70 ns, PBGA64 |
| 封裝： | 8 X 9 MM, 0.80 MM PITCH, FBGA-64 |
| 文件頁數(shù)： | 40/74頁 |
| 文件大?。?/td> | 701K |
| 代理商： | AM29BDS320GTD9VMI |
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38
Am29BDS320G
27243B1 October 1, 2003
P r e l i m i n a r y
Notes:
1. VA = Valid address for programming. During a sector erase operation, a valid
address is any sector address within the sector being erased. During chip erase, a
valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simulta-
neously with DQ5.
Figure 4. Data# Polling Algorithm
RDY: Ready
The RDY is a dedicated output that, by default, indicates (when at logic low) the
system should wait 1 clock cycle before expecting the next word of data. Using
the RDY Configuration Command Sequence, RDY can be set so that a logic low
indicates the system should wait 2 clock cycles before expecting valid data.
RDY functions only while reading data in burst mode. The following conditions
cause the RDY output to be low: during the initial access (in burst mode), and
after the boundary that occurs every 64 words beginning with the 64th address,
3Fh.
DQ7 = Data
Yes
No
No
DQ5 = 1
No
Yes
Yes
FAIL
PASS
Read DQ7–DQ0
Addr = VA
Read DQ7–DQ0
Addr = VA
DQ7 = Data
START
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