參數(shù)資料
型號： AM29BDS320GTC4VMI
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
中文描述： 2M X 16 FLASH 1.8V PROM, 90 ns, PBGA64
封裝： 8 X 9 MM, 0.80 MM PITCH, FBGA-64
文件頁數(shù)： 45/74頁
文件大小： 701K
代理商： AM29BDS320GTC4VMI
October 1, 2003 27243B1
Am29BDS320G
43
P r e l i m i n a r y
Absolute Maximum Ratings
Storage Temperature, Plastic Packages. . . . . . . . . . . . . . . . –65°C to + 150°C
Ambient Temperature with Power Applied . . . . . . . . . . . . . . –65°C to + 125°C
Voltage with Respect to Ground:
All Inputs and I/Os except as noted below (Note 1) . . . . –0.5 V to V
IO
+ 0.5 V
V
CC
(Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to + 2.5 V
V
IO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to + 3.5 V
ACC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to + 12.5 V
Output Short Circuit Current (Note 3)100 mA
Notes:
1. Minimum DC voltage on input or I/Os is –0.5 V. During voltage transitions, inputs
or I/Os may undershoot V
SS
to –2.0 V for periods of up to 20 ns during voltage
transitions inputs might overshoot to V
CC
+ 0.5 V for periods up to 20 ns. See
Figure 6
. Maximum DC voltage on input or I/Os is V
CC
+ 0.5 V. During voltage
transitions outputs may overshoot to V
CC
+ 2.0 V for periods up to 20 ns. See
Figure 7
.
2. No more than one output may be shorted to ground at a time. Duration of the
short circuit should not be greater than one second.
3. Stresses above those listed under “Absolute Maximum Ratings” may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
sections of this data sheet is not implied. Exposure of the device to absolute max-
imum rating conditions for extended periods may affect device reliability.
Operating Ranges
I ndustrial ( I ) Devices
Ambient Temperature (T
A
) . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to + 85°C
Supply Voltages
V
CC
Supply Voltages . . . . . . . . . . . . . . . . . . . . . . . . . . . .+ 1.65 V to + 1.95 V
V
IO
Supply Voltages:
V
IO
≤
V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . + 1.65 V to + 1.95 V
V
IO
> V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . + 2.7 to + 3.15 V
Operating ranges define those limits between which the functionality of the device is
guaranteed.
Figure 6. Maximum Negative
Overshoot Waveform
Figure 7. Maximum Positive Overshoot Waveform
20 ns
20 ns
+ 0.8 V
–0.5 V
20 ns
–2.0 V
20 ns
20 ns
V
CC
+ 2.0 V
V
CC
+ 0.5 V
20 ns
2.0 V
相關(guān)PDF資料
PDF描述
AM29BDS320GTC8VMI 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS320GTC9VMI 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS320GTD3VMI 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS320GTD8VMI 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS320GTD9VMI 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
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