- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375289 > AM29BDS320GTC4VMI (SPANSION LLC) 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PDF資料下載
參數(shù)資料
| 型號： | AM29BDS320GTC4VMI |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 2M X 16 FLASH 1.8V PROM, 90 ns, PBGA64 |
| 封裝： | 8 X 9 MM, 0.80 MM PITCH, FBGA-64 |
| 文件頁數(shù)： | 43/74頁 |
| 文件大小： | 701K |
| 代理商： | AM29BDS320GTC4VMI |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁當(dāng)前第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁
October 1, 2003 27243B1
Am29BDS320G
41
P r e l i m i n a r y
sectors are selected for erasure. Thus, both status bits are required for sector and
mode information. Refer to
Table 15
to compare outputs for DQ2 and DQ6.
See the following for additional information:
Figure 5, “Toggle Bit Algorithm,” on
page 40, See “DQ6: Toggle Bit I” on page 39., Figure 28, “Toggle Bit Timings
(During Embedded Algorithm),” on page 64
, and
Table 15, “DQ6 and DQ2 Indi-
cations,” on page 41
.
Table 15. DQ6 and DQ2 Indications
Reading Toggle Bits DQ6/DQ2
Refer to Figure 4 for the following discussion. Whenever the system initially be-
gins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to
determine whether a toggle bit is toggling. Typically, the system would note and
store the value of the toggle bit after the first read. After the second read, the
system would compare the new value of the toggle bit with the first. If the toggle
bit is not toggling, the device has completed the program or erase operation. The
system can read array data on DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system determines that the toggle
bit is still toggling, the system also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should then determine again
whether the toggle bit is toggling, since the toggle bit may have stopped toggling
just as DQ5 went high. If the toggle bit is no longer toggling, the device has suc-
cessfully completed the program or erase operation. If it is still toggling, the
device did not completed the operation successfully, and the system must write
the reset command to return to reading array data.
The remaining scenario is that the system initially determines that the toggle bit
is toggling and DQ5 has not gone high. The system may continue to monitor the
toggle bit and DQ5 through successive read cycles, determining the status as de-
scribed in the previous paragraph. Alternatively, it may choose to perform other
system tasks. In this case, the system must start at the beginning of the algo-
rithm when it returns to determine the status of the operation (top of Figure 4).
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has exceeded a specified inter-
nal pulse count limit. Under these conditions DQ5 produces a “1,” indicating that
the program or erase cycle was not successfully completed.
If device is
and the system reads
then DQ6
and DQ2
programming,
at any address,
toggles,
does not toggle.
actively erasing,
at an address within a sector
selected for erasure,
toggles,
also toggles.
at an address within sectors
not
selected for erasure,
toggles,
does not toggle.
erase suspended,
at an address within a sector
selected for erasure,
does not toggle,
toggles.
at an address within sectors
not
selected for erasure,
returns array data,
returns array data. The system can read
from any sector not selected for erasure.
programming in
erase suspend
at any address,
toggles,
is not applicable.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29BDS320GTC8VMI | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| AM29BDS320GTC9VMI | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| AM29BDS320GTD3VMI | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| AM29BDS320GTD8VMI | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| AM29BDS320GTD9VMI | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29BDS643GT5KVAI | 制造商:Spansion 功能描述:FLASH PARALLEL 1.8V 64MBIT 4MX16 55NS 44FBGA - Trays |
| AM29BL802CB-65RZET | 制造商:Spansion 功能描述: |
| AM29C01WW WAF | 制造商:Advanced Micro Devices 功能描述: |
| AM29C10API | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| AM29C10AWW DIE | 制造商:Advanced Micro Devices 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。