參數(shù)資料
型號： AM29BDS320GBC8VMI
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
中文描述： 2M X 16 FLASH 1.8V PROM, 90 ns, PBGA64
封裝： 8 X 9 MM, 0.80 MM PITCH, FBGA-64
文件頁數(shù)： 72/74頁
文件大小： 701K
代理商： AM29BDS320GBC8VMI
70
Am29BDS320G
27243B1 October 1, 2003
P r e l i m i n a r y
Erase and Programming Performance
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 1.8 V V
CC
, 1 million cycles. Additionally,
programming typicals assumes a checkerboard pattern.
2. Under worst case conditions of 90°C, V
CC
= 1.65 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
command. See Table
14
for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1 million cycles.
FBGA Ball Capacitance
Notes:
1.
Sampled, not 100% tested.
2.
Test conditions T
A
= 25°C, f = 1.0 MHz.
Data Retention
Parameter
Typ ( Note 1)
Max ( Note 2)
Unit
Comments
0.4
5
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
28
s
Word Programming Time
11.5
210
μs
Excludes system level
overhead (Note 5)
Accelerated Word Programming Time
4
120
μs
Chip Programming Time (Note 3)
25
75
s
Excludes system level
overhead (Note 5)
Accelerated Chip Programming Time
9
27
s
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
4.2
5.0
pF
C
OUT
Output Capacitance
V
OUT
= 0
5.4
6.5
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
3.9
4.7
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°
C
10
Years
125
°
C
20
Years
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