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參數資料
| 型號： | Am29BDD160GB54D |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| 中文描述： | 16兆位（1 M中的x 16-bit/512畝× 32位），2.5伏的CMOS只突發(fā)模式，雙啟動，同步讀/寫閃存 |
| 文件頁數： | 65/80頁 |
| 文件大小： | 3476K |
| 代理商： | AM29BDD160GB54D |
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Am29BDD160G
63
Figure 17. Asynchronous Command Write Timing
Note:
All commands have the same number of cycles in both asynchronous and synchronous modes, including the READ/
RESET command. Only a single array access occurs after the F0h command is entered. All subsequent accesses are burst mode
when the burst mode option is enabled in the Configuration Register.
Figure 18. Synchronous Command Write/Read Timing
Note:
All commands have the same number of cycles in both asynchronous and synchronous modes, including the READ/
RESET command. Only a single array access occurs after the F0h command is entered. All subsequent accesses are burst mode
when the burst mode option is enabled in the Configuration Register.
CE#
A18-A0
DQ31 -DQ0
WE#
OE#
IND/WAIT#
CD#
CLK
ADV#
A18-A0
,
,
WORD#
DQ31-DQ0
OE#
WE#
IND/WAIT#
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