參數(shù)資料
型號(hào)： Am29BDD160GB54D
廠商： Advanced Micro Devices, Inc.
英文描述： 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
中文描述： 16兆位（1 M中的x 16-bit/512畝× 32位），2.5伏的CMOS只突發(fā)模式，雙啟動(dòng)，同步讀/寫(xiě)閃存
文件頁(yè)數(shù)： 63/80頁(yè)
文件大?。?/td> 3476K
代理商： AM29BDD160GB54D
Am29BDD160G
61
AC CHARACTERISTICS
Burst Mode Read
Note:
See Product Selector Guide for minimum initial clock delay prior to initial valid data. t
IACC
may also be calculated using the following
formula: t
IACC
= (clock delays) x (clock period) + t
BACC
.
Parameter
Description
Speed Options
Unit
JEDEC
Std.
54D
64C
65A
t
IACC
Asynchronous Access Time ADV# Valid
Clock to Output Delay (See Note)
Max
54
64
67
ns
t
BACC
Burst Access Time Valid Clock to Output
Delay
Max
9 FBGA
9.5 PQFP
10 FBGA
10 PQFP
17
ns
t
ADVCS
ADV# Setup Time to Rising (Falling)
Edge of CLK
Min
4
5
7
ns
t
ADVCH
ADV# Hold Time
Min
2
ns
t
ADVP
ADV# Pulse Width
Min
15
15
18
ns
t
BDH
Data Hold Time from Next Clock Cycle
Max
4
ns
t
DVCH
Valid Data Hold from CLK
Min
2
3
3
ns
t
DIND
CLK to Valid IND/WAIT#
Max
9 FBGA
9.5 PQFP
10 FBGA
10 PQFP
17
ns
t
INDH
IND/WAIT# Hold from CLK
Min
2
3
3
ns
t
IACC
CLK to Valid Data Out, Initial Burst
Access
Max
54
60
68
ns
t
CLK
CLK Period
Min
15
18
25
ns
Max
60
t
CR
CLK Rise Time
Max
3
ns
t
CF
CLK Fall Time
Max
3
ns
t
CH
CLK High Time
Min
2.5
2.5
3
ns
t
CL
CLK Low Time
Min
2.5
2.5
3
ns
tDS
Data Setup to WE# Rising Edge
Min
15
15
16
ns
t
DH
Data Hold from WE# Rising Edge
Min
2
ns
t
AS
Address Setup to Falling Edge of WE#
Min
0
ns
t
AH
Address Hold from Falling Edge of WE#
Min
25
30
33
ns
t
CS
CE# Setup Time
Min
3
ns
t
CH
CE# Hold Time
Min
3
ns
t
ACS
Address Setup Time to CLK (See Note)
Min
5
6
7
ns
t
ACH
Address Hold Time from ADV# Rising
Edge (See Note)
Min
1
2
2
ns
t
OE
Output Enable to Output Valid
Max
20
ns
t
DF
t
OEZ
Output Enable to Output High Z
Min
2
3
3
ns
Max
10
15
17
t
EHQZ
t
CEZ
Chip Enable to Output High Z
Max
10
15
17
ns
t
CES
CE# Setup Time to Clock
Min
4
5
6
ns
相關(guān)PDF資料
PDF描述
Am29BDD160GT64C 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
Am29BDD160GT65A 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
Am29BDD160GB64C 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
Am29BDD160GB65A 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
AM29BDS323D 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
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