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參數(shù)資料
| 型號： | AM29BDD160GB20CKE |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| 中文描述： | 16兆位（1 M中的x 16-bit/512畝× 32位），2.5伏的CMOS只突發(fā)模式，雙啟動，同步讀/寫閃存 |
| 文件頁數(shù)： | 11/79頁 |
| 文件大?。?/td> | 1368K |
| 代理商： | AM29BDD160GB20CKE |
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June 7, 2006
Am29BDD160G
9
PIN CONFIGURATION
A
–1
= Le
as
t
si
gn
i
f
i
c
a
nt
a
ddre
ss
bi
t for the 16-
bi
t
d
a
t
a
bus
,
a
nd
s
elect
s
b
etween the h
i
gh
a
nd low word
.
A –1
is
not
us
ed for the
3
2-
bi
t mode (WORD# = V
IH
)
.
A0–A1
8
= 1
9
-
bi
t
a
ddre
ss
bus
for 16 M
b
dev
i
ce
.
A
9
su
pport
s
12 V
au
to
s
elect
i
np
u
t
s.
DQ0–DQ
3
1
=
3
2-
bi
t d
a
t
a
i
np
u
t
s
/o
u
tp
u
t
s
/flo
a
t
WORD#
=
S
elect
s
16-
bi
t or
3
2-
bi
t mode
.
When
WORD# = V
IH
, d
a
t
a
is
o
u
tp
u
t on
DQ
3
1–DQ0
.
When WORD# = V
IL
, d
a
t
a
is
o
u
tp
u
t on DQ15–DQ0
.
CE#
= Ch
i
p En
ab
le Inp
u
t
.
Th
is
si
gn
a
l
is
as
ynchro-
no
us
rel
a
t
i
ve to CLK for the
bu
r
s
t mode
.
OE#
= O
u
tp
u
t En
ab
le Inp
u
t
.
Th
is
si
gn
a
l
is
as
yn-
chrono
us
rel
a
t
i
ve to CLK for the
bu
r
s
t
mode
.
WE#
= Wr
i
te en
ab
le
.
Th
is
si
gn
a
l
is
as
ynchrono
us
rel
a
t
i
ve to CLK for the
bu
r
s
t mode
.
V
SS
NC
= Dev
i
ce gro
u
nd
= P
i
n not connected
i
ntern
a
lly
RY/BY#
= Re
a
dy/B
us
y o
u
tp
u
t
a
nd open dr
ai
n
.
When
RY/BY# = V
IH
, the dev
i
ce
is
re
a
dy to
a
c-
cept re
a
d oper
a
t
i
on
s
a
nd comm
a
nd
s.
When RY/BY# = V
OL
, the dev
i
ce
is
e
i
ther
exec
u
t
i
ng
a
n em
b
edded
a
lgor
i
thm or the
dev
i
ce
is
exec
u
t
i
ng
a
h
a
rdw
a
re re
s
et oper-
a
t
i
on
.
CLK
= Clock Inp
u
t th
a
t c
a
n
b
e t
i
ed to the
s
y
s
tem
or m
i
croproce
ss
or clock
a
nd prov
i
de
s
the
f
u
nd
a
ment
a
l t
i
m
i
ng
a
nd
i
ntern
a
l oper
a
t
i
ng
fre
qu
ency
.
ADV#
= Lo
a
d B
u
r
s
t Addre
ss
i
np
u
t
.
Ind
i
c
a
te
s
th
a
t
the v
a
l
i
d
a
ddre
ss
is
pre
s
ent on the
a
ddre
ss
i
np
u
t
s.
IND#
= End of
bu
r
s
t
i
nd
i
c
a
tor for f
i
n
i
te
bu
r
s
t
s
only
.
IND
is
low when the l
as
t word
i
n the
bu
r
s
t
s
e
qu
ence
is
a
t the d
a
t
a
o
u
tp
u
t
s.
WAIT#
= Prov
i
de
s
d
a
t
a
v
a
l
i
d feed
ba
ck only when
the
bu
r
s
t length
is
s
et to cont
i
n
u
o
us.
WP#
= Wr
i
te Protect
i
np
u
t
.
When WP# = V
, the
two o
u
termo
s
t
b
oot
b
lock
s
ector
i
n the 75
%
ba
nk
a
re wr
i
te protected reg
a
rdle
ss
of
other
s
ector protect
i
on conf
i
g
u
r
a
t
i
on
s.
ACC
= Acceler
a
t
i
on
i
np
u
t
.
When t
a
ken to 12 V,
progr
a
m
a
nd er
as
e oper
a
t
i
on
s
a
re
a
cceler-
a
ted
.
When not
us
ed for
a
cceler
a
t
i
on, ACC
= V
SS
to V
CC
.
= O
u
tp
u
t B
u
ffer Power
Su
pply (1
.
65 V to
2
.
75 V)
V
IO
(V
CCQ
)
V
CC
RE
S
ET#
= Ch
i
p Power
Su
pply (2
.
5 V to 2
.
75 V)
= H
a
rdw
a
re re
s
et
i
np
u
t
LOGIC
S
YMBOL
S
x16 Mode
x
3
2 Mode
20
16
DQ0–DQ15
A-1 to A1
8
CLK
RY/BY#
IND/WAIT#
CE#
OE#
WE#
RE
S
ET#
ADV#
ACC
WP#
V
IO
(V
CCQ
)
WORD#
1
9
3
2
DQ0–DQ
3
1
A0–A1
8
CLK
RY/BY#
IND/WAIT#
CE#
OE#
WE#
RE
S
ET#
ADV#
ACC
WP#
V
IO
(V
CCQ
)
WORD#
相關PDF資料 |
PDF描述 |
|---|---|
| AM29BDD160GB20CKF | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB20CKI | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB20CKK | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB20CPBE | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB20CPBF | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
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