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參數(shù)資料

型號(hào)：	AM29BDD160GB20APBK
廠商：	Advanced Micro Devices, Inc.
英文描述：	16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
中文描述：	16兆位（1 M中的x 16-bit/512畝× 32位），2.5伏的CMOS只突發(fā)模式，雙啟動(dòng)，同步讀/寫(xiě)閃存
文件頁(yè)數(shù)：	33/79頁(yè)
文件大小：	1368K
代理商：	AM29BDD160GB20APBK

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June 7, 2006

Am29BDD160G

31

COMMON FLA

S

H MEMORY INTERFACE

(CFI)

The Common Fl

as

h Interf

a

ce (CFI)

s

pec

i

f

i

c

a

t

i

on o

u

t-

l

i

ne

s

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i

ce

a

nd ho

s

t

s

y

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tem

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oftw

a

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i

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i

on

h

a

nd

s

h

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ke, wh

i

ch

a

llow

s

s

pec

i

f

i

c vendor-

s

pec

i

f

i

ed

s

oftw

a

re

a

lgor

i

thm

s

to

b

e

us

ed for ent

i

re f

a

m

i

l

i

e

s

of

dev

i

ce

s.

S

oftw

a

re

su

pport c

a

n then

b

e dev

i

ce-

i

nde-

pendent, JEDEC ID-

i

ndependent,

a

nd forw

a

rd-

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nd

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s

pec

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f

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Fl

as

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c

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t

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i

r ex

is

t

i

ng

i

nterf

a

ce

s

for long-term comp

a

t

ibi

l

i

ty

.

Th

is

dev

i

ce enter

s

the CFI Q

u

ery mode when the

s

y

s

-

tem wr

i

te

s

the CFI Q

u

ery comm

a

nd,

98

h, to

a

ddre

ss

55h

i

n word mode (or

a

ddre

ss

AAh

i

n

b

yte mode),

a

ny

t

i

me the dev

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ce

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dy to re

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rr

a

y d

a

t

a.

The

s

y

s

tem c

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n re

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d CFI

i

nform

a

t

i

on

a

t the

a

ddre

ss

e

s

g

i

ven

i

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ab

le

s

1

3

–16

.

To term

i

n

a

te re

a

d

i

ng CFI d

a

t

a

,

the

s

y

s

tem m

us

t wr

i

te the re

s

et comm

a

nd

.

The

s

y

s

tem c

a

n

a

l

s

o wr

i

te the CFI

qu

ery comm

a

nd

when the dev

i

ce

is

i

n the

au

to

s

elect mode

.

The dev

i

ce

enter

s

the CFI

qu

ery mode,

a

nd the

s

y

s

tem c

a

n re

a

d

CFI d

a

t

a

a

t the

a

ddre

ss

e

s

g

i

ven

i

n T

ab

le

s

1

3

–16

.

The

s

y

s

tem m

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t wr

i

te the re

s

et comm

a

nd to ret

u

rn the de-

v

i

ce to the

au

to

s

elect mode

.

For f

u

rther

i

nform

a

t

i

on, ple

as

e refer to the CFI

S

pec

i

f

i

-

c

a

t

i

on

a

nd CFI P

ub

l

i

c

a

t

i

on 100,

a

v

ai

l

ab

le v

ia

the

World W

i

de We

b

a

t http

:

//www

.a

md

.

com/prod-

u

ct

s

/nvd/overv

i

ew/cf

i.

html

.

Altern

a

t

i

vely, cont

a

ct

a

n

AMD repre

s

ent

a

t

i

ve for cop

i

e

s

of the

s

e doc

u

ment

s.

Table 14

.

CFI Query Ident

i

f

i

cat

i

on

S

tr

i

n

g

Table 15

.

CFI

S

y

s

tem Interface

S

tr

i

n

g

Addre

ss

e

s

(x

3

2 Mode)

Addre

ss

e

s

(x16 Mode)

Data

De

s

cr

i

pt

i

on

10h

11h

12h

20h

22h

24h

0051h

0052h

005

9

h

Q

u

ery Un

iqu

e A

S

CII

s

tr

i

ng “QRY”

1

3

h

14h

26h

2

8

h

0002h

0000h

Pr

i

m

a

ry OEM Comm

a

nd

S

et

15h

16h

2Ah

2Ch

0040h

0000h

Addre

ss

for Pr

i

m

a

ry Extended T

ab

le

17h

1

8

h

2Eh

3

0h

0000h

0000h

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nd

S

et (00h = none ex

is

t

s

)

1

9

h

1Ah

3

2h

3

4h

0000h

0000h

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ss

for Altern

a

te OEM Extended T

ab

le (00h = none ex

is

t

s

)

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s

(x

3

2 Mode)

Addre

ss

e

s

(x16 Mode)

Data

De

s

cr

i

pt

i

on

1Bh

3

6h

002

3

h

V

CC

M

i

n

.

(wr

i

te/er

as

e)

DQ7–DQ4

:

volt

s

, DQ

3

–DQ0

:

100 m

i

ll

i

volt

1Ch

38

h

0027h

V

M

a

x

.

(wr

i

te/er

as

e)

DQ7–DQ4

:

volt

s

, DQ

3

–DQ0

:

100 m

i

ll

i

volt

1Dh

3

Ah

0000h

V

PP

M

i

n

.

volt

a

ge (00h = no V

PP

p

i

n pre

s

ent)

1Eh

3

Ch

0000h

V

PP

M

a

x

.

volt

a

ge (00h = no V

PP

p

i

n pre

s

ent)

Typ

i

c

a

l t

i

meo

u

t per

si

ngle word/do

ub

leword progr

a

m 2

N

μs

1Fh

3

Eh

0004h

20h

40h

0000h

Typ

i

c

a

l t

i

meo

u

t for M

i

n

.

si

ze

bu

ffer progr

a

m 2

N

μs

(00h = not

su

pported)

21h

42h

000

9

h

Typ

i

c

a

l t

i

meo

u

t per

i

nd

i

v

i

d

ua

l

b

lock er

as

e 2

N

m

s

22h

44h

0000h

Typ

i

c

a

l t

i

meo

u

t for f

u

ll ch

i

p er

as

e 2

N

m

s

(00h = not

su

pported)

2

3

h

46h

0005h

M

a

x

.

t

i

meo

u

t for word/do

ub

leword progr

a

m 2

N

t

i

me

s

typ

i

c

a

l

24h

4

8

h

0000h

M

a

x

.

t

i

meo

u

t for

bu

ffer wr

i

te 2

N

t

i

me

s

typ

i

c

a

l

25h

4Ah

0007h

M

a

x

.

t

i

meo

u

t per

i

nd

i

v

i

d

ua

l

b

lock er

as

e 2

N

t

i

me

s

typ

i

c

a

l

26h

4Ch

0000h

M

a

x

.

t

i

meo

u

t for f

u

ll ch

i

p er

as

e 2

N

t

i

me

s

typ

i

c

a

l (00h = not

su

pported)

相關(guān)PDF資料	PDF描述
AM29BDD160GB20CKE	16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
AM29BDD160GB20CKF	16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
AM29BDD160GB20CKI	16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
AM29BDD160GB20CKK	16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
AM29BDD160GB20CPBE	16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory

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