參數資料
型號： AM29BDD160GB20APBK
廠商： Advanced Micro Devices, Inc.
英文描述： 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
中文描述： 16兆位（1 M中的x 16-bit/512畝× 32位），2.5伏的CMOS只突發(fā)模式，雙啟動，同步讀/寫閃存
文件頁數： 18/79頁
文件大?。?/td> 1368K
代理商： AM29BDD160GB20APBK
16
Am29BDD160G
June 7, 2006
Table 5
.
Am29BDD160 Auto
s
elect Code
s
(H
ig
h Volta
g
e Method)
L = Log
i
c Low = V
IL
, H = Log
i
c H
i
gh = V
IH
, SA = Sector Addre
ss
, X = Don’t c
a
re
.
Note:
The
au
to
s
elect code
s
m
a
y
a
l
s
o
b
e
a
cce
ss
ed
i
n-
s
y
s
tem v
ia
comm
a
nd
s
e
qu
ence
s.
See T
ab
le
s
18
a
nd 20
.
A
s
ynchronou
s
Read Operat
i
on
(Non-Bur
s
t)
The dev
i
ce h
as
two control f
u
nct
i
on
s
wh
i
ch m
us
t
b
e
sa
t
is
f
i
ed
i
n order to o
b
t
ai
n d
a
t
a
a
t the o
u
tp
u
t
s.
CE#
is
the power control
a
nd
s
ho
u
ld
b
e
us
ed for dev
i
ce
s
elec-
t
i
on
.
OE#
is
the o
u
tp
u
t control
a
nd
s
ho
u
ld
b
e
us
ed to
g
a
te d
a
t
a
to the o
u
tp
u
t p
i
n
s
i
f the dev
i
ce
is
s
elected
.
The dev
i
ce
is
power-
u
p
i
n
a
n
as
ynchrono
us
re
a
d
mode
.
In the
as
ynchrono
us
mode the dev
i
ce h
as
two
control f
u
nct
i
on
s
wh
i
ch m
us
t
b
e
sa
t
is
f
i
ed
i
n order to
o
b
t
ai
n d
a
t
a
a
t the o
u
tp
u
t
s.
CE#
is
the power control
a
nd
s
ho
u
ld
b
e
us
ed for dev
i
ce
s
elect
i
on
.
OE#
is
the
o
u
tp
u
t control
a
nd
s
ho
u
ld
b
e
us
ed to g
a
te d
a
t
a
to the
o
u
tp
u
t p
i
n
s
i
f the dev
i
ce
is
s
elected
.
Addre
ss
a
cce
ss
t
i
me (t
ACC
)
is
e
qua
l to the del
a
y from
s
t
ab
le
a
ddre
ss
e
s
to v
a
l
i
d o
u
tp
u
t d
a
t
a.
The ch
i
p en
ab
le
a
cce
ss
t
i
me (t
CE
)
is
the del
a
y from the
s
t
ab
le
a
d-
dre
ss
e
s
a
nd
s
t
ab
le CE# to v
a
l
i
d d
a
t
a
a
t the o
u
tp
u
t
p
i
n
s.
The o
u
tp
u
t en
ab
le
a
cce
ss
t
i
me
is
the del
a
y from
the f
a
ll
i
ng edge of OE# to v
a
l
i
d d
a
t
a
a
t the o
u
tp
u
t p
i
n
s
(
assu
m
i
ng the
a
ddre
ss
e
s
h
a
ve
b
een
s
t
ab
le for
a
t le
as
t
t
ACC
–t
OE
t
i
me)
.
Note:
Oper
a
t
i
on
is
s
hown for the 32-
bi
t d
a
t
a
bus.
For the 16-
bi
t d
a
t
a
bus
, A-1
is
re
qui
red
.
F
ig
ure 1
.
A
s
ynchronou
s
Read Operat
i
on
De
s
cr
i
pt
i
on
CE# OE# WE#
A1
8
to
A11 A10
A9
A
8
A7
A6
A5
to
A4
A
3
A2
A1
A0
DQ7
to
DQ0
M
a
n
u
f
a
ct
u
rer ID
:
AMD
L
L
H
X
X
V
ID
X
X
L
X
X
X
L
L
0001h
A
u
t
s
e
i
c
Re
a
d Cycle 1
L
L
H
X
X
V
ID
X
L
L
X
L
L
L
H
007Eh
Re
a
d Cycle 2
L
L
H
X
X
V
ID
X
L
L
L
H
H
H
L
000
8
h
Re
a
d Cycle
3
L
L
H
X
X
V
ID
X
L
L
L
H
H
H
H
0000h (top
b
oot
b
lock)
0001h (
b
ottom
b
oot
b
lock)
PPB Protect
i
on
S
t
a
t
us
L
L
H
S
A
X
V
ID
X
L
L
L
L
L
H
L
0000h (
u
nprotected)
0001h (protected)
D0
D1
D2
D
3
D
3
CE#
CLK
ADV#
A0
-
A1
8
DQ0
-
DQ
3
1
OE#
WE#
IND/WAIT#
V
IH
Flo
a
t
V
OH
Addre
ss
0
Addre
ss
1
Addre
ss
2
Addre
ss
3
Flo
a
t
相關PDF資料
PDF描述
AM29BDD160GB20CKE 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
AM29BDD160GB20CKF 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
AM29BDD160GB20CKI 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
AM29BDD160GB20CKK 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
AM29BDD160GB20CPBE 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
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