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參數(shù)資料
| 型號： | AM29BDD160GB17CPBI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| 中文描述： | 16兆位（1 M中的x 16-bit/512畝× 32位），2.5伏的CMOS只突發(fā)模式，雙啟動，同步讀/寫閃存 |
| 文件頁數(shù)： | 26/79頁 |
| 文件大?。?/td> | 1368K |
| 代理商： | AM29BDD160GB17CPBI |
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24
Am29BDD160G
June 7, 2006
In
i
t
i
al Acce
ss
Delay Conf
ig
urat
i
on
The fre
qu
ency conf
i
g
u
r
a
t
i
on
i
nform
s
the dev
i
ce of the
n
u
m
b
er of clock
s
th
a
t m
us
t el
a
p
s
e
a
fter ADV#
is
dr
i
ven
a
ct
i
ve
b
efore d
a
t
a
w
i
ll
b
e
a
v
ai
l
ab
le
.
Th
is
v
a
l
u
e
is
determ
i
ned
b
y the
i
np
u
t clock fre
qu
ency
.
S
ECTOR PROTECTION
The Am2
9
BDD160 fe
a
t
u
re
s
s
ever
a
l level
s
of
s
ector
protect
i
on, wh
i
ch c
a
n d
isab
le
b
oth the progr
a
m
a
nd
er
as
e oper
a
t
i
on
s
i
n cert
ai
n
s
ector
s
or
s
ector gro
u
p
s
Sector and Sector Groups
The d
is
t
i
nct
i
on
b
etween
s
ector
s
a
nd
s
ector gro
u
p
s
is
f
u
nd
a
ment
a
l to
s
ector protect
i
on
.
S
ector
a
re
i
nd
i
v
i
d
ua
l
s
ector
s
th
a
t c
a
n
b
e
i
nd
i
v
i
d
ua
lly
s
ector protected/
u
n-
protected
.
The
s
e
a
re the o
u
termo
s
t 4 kword
b
oot
s
ec-
tor
s
, th
a
t
is
,
S
A0 to
S
A7
a
nd
S
A
38
to
S
A45
.
S
ee
t
ab
le
s
11
a
nd 12
.
S
ector gro
u
p
s
a
re
a
collect
i
on of three or fo
u
r
a
d
ja
cent
3
2 kword
s
ector
s.
For ex
a
mple,
s
ector gro
u
p
S
G
8
is
compr
is
ed of
s
ector
S
A
8
to
S
A10
.
When
a
ny
s
ector
i
n
a
s
ector gro
u
p
is
protected/
u
nprotected, every
s
ector
i
n th
a
t gro
u
p
is
protect
i
on/
u
nprotected
.
S
ee T
ab
le
s
11
a
nd 12
.
Persistent Sector Protection
A comm
a
nd
s
ector protect
i
on method th
a
t repl
a
ce
s
the old 12 V controlled protect
i
on method
.
Password Sector Protection
A h
i
ghly
s
oph
is
t
i
c
a
ted protect
i
on method th
a
t re
qui
re
s
a
p
ass
word
b
efore ch
a
nge
s
to cert
ai
n
s
ector
s
or
s
ec-
tor gro
u
p
s
a
re perm
i
tted
WP# Hardware Protection
A wr
i
te protect p
i
n th
a
t c
a
n prevent progr
a
m or er
as
e
to the two o
u
termo
s
t
8
K
b
yte
s
s
ector
s
i
n the 75
%
ba
nk
All p
a
rt
s
def
au
lt to oper
a
te
i
n the Per
sis
tent
S
ector
Protect
i
on mode
.
The c
us
tomer m
us
t then choo
s
e
i
f
the Per
sis
tent or P
ass
word Protect
i
on method
is
mo
s
t
de
si
r
ab
le
.
There
a
re two one-t
i
me progr
a
mm
ab
le
non-vol
a
t
i
le
bi
t
s
th
a
t def
i
ne wh
i
ch
s
ector protect
i
on
method w
i
ll
b
e
us
ed
.
If the c
us
tomer dec
i
de
s
to con-
t
i
n
u
e
usi
ng the Per
sis
tent
S
ector Protect
i
on method,
they m
us
t
s
et the
Per
sis
tent
S
ector Protect
i
on
Mode Lock
i
n
g
B
i
t
.
Th
is
w
i
ll perm
a
nently
s
et the p
a
rt
to oper
a
te only
usi
ng Per
sis
tent
S
ector Protect
i
on
.
If
the c
us
tomer dec
i
de
s
to
us
e the p
ass
word method,
they m
us
t
s
et the
Pa
ss
word Mode Lock
i
n
g
B
i
t
.
Th
is
w
i
ll perm
a
nently
s
et the p
a
rt to oper
a
te only
usi
ng
p
ass
word
s
ector protect
i
on
.
It
is
i
mport
a
nt to remem
b
er th
a
t
s
ett
i
ng e
i
ther the
Per-
sis
tent
S
ector Protect
i
on Mode Lock
i
n
g
B
i
t
or the
Pa
ss
word Mode Lock
i
n
g
B
i
t
perm
a
nently
s
elect
s
the protect
i
on mode
.
It
is
not po
ssib
le to
s
w
i
tch
b
e-
tween the two method
s
once
a
lock
i
ng
bi
t h
as
b
een
s
et
.
It
is
i
mportant that one mode
is
expl
i
c
i
tly
s
e-
lected when the dev
i
ce
is
f
i
r
s
t pro
g
rammed, rather
than rely
i
n
g
on the default mode alone
.
Th
is
is
s
o
th
a
t
i
t
is
not po
ssib
le for
a
s
y
s
tem progr
a
m or v
i
r
us
to
l
a
ter
s
et the P
ass
word Mode Lock
i
ng B
i
t, wh
i
ch wo
u
ld
c
aus
e
a
n
u
nexpected
s
h
i
ft from the def
au
lt Per
sis
tent
S
ector Protect
i
on Mode
i
nto the P
ass
word Protect
i
on
Mode
.
The WP# H
a
rdw
a
re Protect
i
on fe
a
t
u
re
is
a
lw
a
y
s
a
v
ai
l-
ab
le,
i
ndependent of the
s
oftw
a
re m
a
n
a
ged protect
i
on
method cho
s
en
.
Per
sis
tent
S
ector Protect
i
on
The Per
sis
tent
S
ector Protect
i
on method repl
a
ce
s
the
old 12 V controlled protect
i
on method wh
i
le
a
t the
sa
me t
i
me enh
a
nc
i
ng flex
ibi
l
i
ty
b
y prov
i
d
i
ng three d
i
f-
ferent
s
ector protect
i
on
s
t
a
te
s:
■
Per
sis
tently Locked
—A
s
ector
is
protected
a
nd
c
a
nnot
b
e ch
a
nged
.
■
Dynam
i
cally Locked
—The
s
ector
is
protected
a
nd
c
a
n
b
e ch
a
nged
b
y
a
si
mple comm
a
nd
■
Unlocked
—The
s
ector
is
u
nprotected
a
nd c
a
n
b
e
ch
a
nged
b
y
a
si
mple comm
a
nd
Table 10
.
Conf
ig
urat
i
on Re
gis
ter After Dev
i
ce Re
s
et
CR15
CR14
CR1
3
CR12
CR11
CR10
CR
9
CR
8
RM
Re
s
erve
IAD
3
IAD2
IAD1
IAD0
DOC
WC
1
0
0
1
1
1
0
0
CR7
CR6
CR5
CR4
CR
3
CR2
CR1
CR0
B
S
CC
Re
s
erve
Re
s
erve
Re
s
erve
BL2
BL1
BL0
1
1
0
0
0
1
0
0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29BDD160GB17CPBK | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB17DKF | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB17DKI | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB17DKK | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB17DPBE | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
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