參數(shù)資料
型號: AM29BDD160G
廠商: Advanced Micro Devices, Inc.
英文描述: 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
中文描述: 16兆位(1 M中的x 16-bit/512畝× 32位),2.5伏的CMOS只突發(fā)模式,雙啟動,同步讀/寫閃存
文件頁數(shù): 21/80頁
文件大?。?/td> 3476K
代理商: AM29BDD160G
Am29BDD160G
19
Note:
Operation is shown for the 32-bit data bus. For a 16-bit data bus, A-1 is required. Figure shown with 3-CLK initial access
delay configuration, linear address, 4-doubleword burst, output on rising CLK edge, data hold for 1-CLK, IND/WAIT# as-
serted on the last transfer before wrap-around.
Figure 2. End of Burst Indicator (IND/WAIT#) Timing for Linear 8-Word Burst Operation
Table 7. Valid Configuration Register Bit Definition for IND/WAIT#
DOC
WC
CC
Definition
0
0
1
IND/WAIT# = V
IL
for 1-CLK cycle, Active on last transfer, Driven on rising CLK edge
0
1
1
IND/WAIT# = V
IL
for 1-CLK cycle, Active on second to last transfer, Driven on rising CLK edge
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