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| 型號(hào)： | ADUC814 |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | MicroConverter, Small Package 12-Bit ADC with Embedded Flash MCU |
| 中文描述： | MicroConverter的，小包裝12位ADC，嵌入式閃存MCU |
| 文件頁(yè)數(shù)： | 30/72頁(yè) |
| 文件大?。?/td> | 846K |
| 代理商： | ADUC814 |
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ADuC814
NONVOLITILE FLASH/EE MEMORY
FLASH/EE MEMORY OVERVIEW
The ADuC814 incorporates Flash/EE memory technology on-
chip to provide the user with nonvolatile, in-circuit reprogram-
mable code and data memory space.
Rev. A | Page 30 of 72
Flash/EE memory takes the flexible in-circuit reprogrammable
features of EEPROM and combines them with the space efficient/
density features of EPROM (see Figure 32).
Because Flash/EE technology is based on a single transistor cell
architecture, a Flash memory array such as EPROM can be
implemented to achieve the space efficiencies or memory
densities required by a given design.
Like EEPROM, flash memory can be programmed in-system at
a byte level, although it must first be erased; the erase being
performed in page blocks. Thus, flash memory is often and
more correctly referred to as Flash/EE memory.
EEPROM
TECHNOLOGY
EPROM
TECHNOLOGY
FLASH/EE MEMORY
TECHNOLOGY
IN-CIRCUIT
REPROGRAMMABLE
SPACE EFFICIENT/
DENSITY
0
Figure 32. Flash/EE Memory Development
Incorporated in the ADuC814, Flash/EE memory technology
allows the user to update program code space in-circuit without
the need to replace one-time programmable (OTP) devices at
remote operating nodes.
FLASH/EE MEMORY AND THE ADUC814
The ADuC814 provides two arrays of Flash/EE memory for
user applications. There are 8 kbytes of Flash/EE program space
provided on-chip to facilitate code execution, therefore removing
the requirement for an external discrete ROM device. The pro-
gram memory can be programmed using conventional third-
party memory programmers. This array can also be programmed
in-circuit, using the serial download mode provided.
A 640-byte Flash/EE data memory space is also provided on-
chip. This may be used as a general-purpose nonvolatile
scratchpad area. User access to this area is via a group of six
SFRs. This space can be programmed at a byte level, although it
must first be erased in 4-byte pages.
ADUC814 FLASH/EE MEMORY RELIABILITY
The Flash/EE program and data memory arrays on the
ADuC814 are fully qualified for two key Flash/EE memory
characteristics: Flash/EE memory cycling endurance and
Flash/EE memory data retention.
Endurance quantifies the ability of the Flash/EE memory to be
cycled through many program, read, and erase cycles. In real
terms, a single endurance cycle is composed of four
independent, sequential events:
1.
2.
3.
4.
Initial page erase sequence
Read/verify sequence
Byte program sequence
Second read/verify sequence
In reliability qualification, every byte in both the program and
data Flash/EE memory is cycled from 00H to FFH until a first
fail is recorded signifying the endurance limit of the on-chip
Flash/EE memory.
As indicated in the Specifications tables, the ADuC814 Flash/EE
memory endurance qualification has been carried out in accor-
dance with JEDEC Specification A117 over the industrial
temperature range of –40°C to +125°C. The results allow the
specification of a minimum endurance figure over supply and a
temperature of 100,000 cycles, with an endurance figure of
700,000 cycles being typical of operation at 25°C.
Retention quantifies the ability of the Flash/EE memory to
retain its programmed data over time. Again, the ADuC814 has
been qualified in accordance with the formal JEDEC Retention
Lifetime Specification (A117) at a specific junction temperature
(T
J
= 55°C). As part of this qualification procedure, the Flash/EE
memory is cycled to its specified endurance limit described
above, before data retention is characterized. This means that
the Flash/EE memory is guaranteed to retain its data for its full
specified retention lifetime every time the Flash/EE memory is
reprogrammed. It should be noted that retention lifetime, based
on an activation energy of 0.6 eV, derates with T
J
as shown in
Figure 33.
40
60
70
90
T
J
JUNCTION TEMPERATURE (
°
C)
R
250
200
150
100
50
0
50
80
110
300
100
ADI SPECIFICATION
100 YEARS MIN.
AT T
J
= 55
°
C
0
Figure 33. Flash/EE Memory Data Retention
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ADUC814ARU | MicroConverter, Small Package 12-Bit ADC with Embedded Flash MCU |
| ADUC814ARU-REEL | MicroConverter, Small Package 12-Bit ADC with Embedded Flash MCU |
| ADUC824 | MicroConverter, Dual-Channel 16-/24-Bit ADCs with Embedded FLASH MCU |
| ADUC824BS | MicroConverter, Dual-Channel 16-/24-Bit ADCs with Embedded FLASH MCU |
| ADUC831 | LJT 6C 6#22D PIN RECP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ADUC814_02 | 制造商:AD 制造商全稱:Analog Devices 功能描述:MicroConverter, Small Package 12-Bit ADC with Embedded FLASH MCU |
| ADUC814AN | 功能描述:8052 MicroConverter? ADuC8xx Microcontroller IC 8-Bit 16.78MHz 8KB (8K x 8) FLASH 制造商:analog devices inc. 系列:MicroConverter? ADuC8xx 包裝:- 零件狀態(tài):上次購(gòu)買時(shí)間 核心處理器:8052 核心尺寸:8-位 速度:16.78MHz 連接性:I2C，SPI，UART/USART 外設(shè):POR，PSM，溫度傳感器，WDT I/O 數(shù):- 程序存儲(chǔ)容量:8KB（8K x 8） 程序存儲(chǔ)器類型:閃存 EEPROM 容量:640 x 8 RAM 容量:256 x 8 電壓 - 電源（Vcc/Vdd）:2.7 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:* 振蕩器類型:內(nèi)部 工作溫度:* 封裝/外殼:- 供應(yīng)商器件封裝:- 標(biāo)準(zhǔn)包裝:1 |
| ADUC814ARU | 功能描述:IC ADC 12BIT W/FLASH MCU 28TSSOP RoHS:否 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:MicroConverter® ADuC8xx 標(biāo)準(zhǔn)包裝:38 系列:Encore!® XP® 核心處理器:eZ8 芯體尺寸:8-位 速度:5MHz 連通性:IrDA，UART/USART 外圍設(shè)備:欠壓檢測(cè)/復(fù)位，LED，POR，PWM，WDT 輸入/輸出數(shù):16 程序存儲(chǔ)器容量:4KB（4K x 8） 程序存儲(chǔ)器類型:閃存 EEPROM 大小:- RAM 容量:1K x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 3.6 V 數(shù)據(jù)轉(zhuǎn)換器:- 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 105°C 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 包裝:管件 其它名稱:269-4116Z8F0413SH005EG-ND |
| ADUC814ARU-D2 | 制造商:Analog Devices 功能描述:12 BIT ADC WITH EMBEDDED 8-BIT MICRO I.C - Tape and Reel 制造商:Rochester Electronics LLC 功能描述:12 BIT ADC WITH EMBEDDED 8-BIT MICRO I.C - Bulk |
| ADUC814ARU-REEL | 制造商:Analog Devices 功能描述:MCU 8-Bit ADuC8xx 8052 CISC 8KB Flash 3V/5V 28-Pin TSSOP T/R 制造商:Analog Devices 功能描述:12 BIT ADC WITH EMBEDDED 8-BIT MICRO I.C - Tape and Reel |
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