![](http://datasheet.mmic.net.cn/310000/ADS1000A1IDBVR_datasheet_16243173/ADS1000A1IDBVR_2.png)
www.ti.com
PACKAGE/ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS
(1)
over operating free-air temperature range (unless otherwise noted)
NOTE: Marking text direction indicates pin 1. Marking text depends on I C address; see Package Option Addendum.
BD0
V
IN
-
6
V
DD
5
SDA
4
SCL
3
GND
2
V
IN+
1
BD1
V
IN
-
6
V
DD
5
SDA
4
SCL
3
GND
2
V
IN+
1
I C address: 1001000
I C address: 1001001
ADS1000
SBAS357–SEPTEMBER 2006
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be
more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
For the most current package and ordering information, see the Package Option Addendum located at the end
of this datasheet or see the TI website at
www.ti.com
.
ADS1000
–0.3 to +6
100
10
–0.3 to V
DD
to +0.3
–0.5 to +6
+150
–40 to +125
–60 to +150
+300
UNIT
V
mA
mA
V
V
°
C
°
C
°
C
°
C
V
DD
to GND
Input Current (Momentary)
Input Current (Continuous)
Voltage to GND, V
IN+
, V
IN–
Voltage to GND, SDA, SCL
Maximum Junction Temperature, T
J
Operating Temperature
Storage Temperature
Lead Temperature (soldering, 10s)
(1)
Stresses above those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to absolute
maximum conditions for extended periods may affect device reliability.
PIN CONFIGURATION
2