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參數(shù)資料
| 型號(hào)： | ADG719SRJZ-EP-RL7 |
| 廠商： | Analog Devices Inc |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | IC SWITCH MONOLITHIC CMOS SPDT |
| 標(biāo)準(zhǔn)包裝： | 3,000 |
| 功能： | 開(kāi)關(guān) |
| 電路： | 1 x SPDT - NC/NO |
| 導(dǎo)通狀態(tài)電阻： | 4 歐姆 |
| 電壓電源： | 單電源 |
| 電壓 - 電源，單路/雙路(±)： | 1.8 V ~ 5.5 V |
| 電流 - 電源： | 1nA |
| 工作溫度： | -55°C ~ 125°C |
| 安裝類(lèi)型： | 表面貼裝 |
| 封裝/外殼： | SOT-23-6 |
| 供應(yīng)商設(shè)備封裝： | SOT-23-6 |
| 包裝： | 帶卷 (TR) |
ADG719-EP
Rev. 0 | Page 4 of
12
VDD = 3 V ± 10%, GND = 0 V.
Table 2.
Parameter
+25°C
55°C to +125°C
Unit
Test Conditions/Comments
ANALOG SWITCH
0 V to VDD
V
Analog Signal Range
On Resistance (RON)
6
Ω typ
VS = 0 V to VDD, IS = 10 mA;
12
Ω max
see Figure 13
On Resistance Match Between
Channels (ΔRON)
0.1
Ω typ
VS = 0 V to VDD, IS = 10 mA
0.4
Ω max
On Resistance Flatness (RFLAT(ON))
2.5
Ω typ
VS = 0 V to VDD, IS = 10 mA
LEAKAGE CURRENTS
VDD = 3.3 V
Source Off Leakage IS (Off )
±0.01
nA typ
VS = 3 V/1 V, VD = 1 V/3 V;
±0.25
1
nA max
see Figure 14
Channel On Leakage ID, IS (On)
±0.01
nA typ
VS = VD = 1 V or VS = VD = 3 V;
±0.25
5
nA max
see Figure 15
DIGITAL INPUTS
Input High Voltage, VINH
2.0
V min
Input Low Voltage, VINL
0.8
V max
Input Current
IINL or IINH
0.005
μA typ
VIN = VINL or VINH
±0.1
μA max
DYNAMIC CHARACTERISTICS1
tON
10
ns typ
RL = 300 Ω, CL = 35 pF
15
ns max
tOFF
4
ns typ
RL = 300 Ω, CL = 35 pF
8
ns max
Break-Before-Make Time Delay, tD
8
ns typ
RL = 300 Ω, CL = 35 pF
1
ns min
Off Isolation
67
dB typ
RL = 50 Ω, CL = 5 pF, f = 10 MHz
87
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 18
Channel-to-Channel Crosstalk
62
dB typ
RL = 50 Ω, CL = 5 pF, f = 10 MHz
82
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 19
Bandwidth 3 dB
200
MHz typ
CS (Off )
7
pF typ
CD, CS (On)
27
pF typ
POWER REQUIREMENTS
VDD = 3.3 V
Digital inputs = 0 V or 3.3 V
IDD
0.001
μA typ
1.0
μA max
1 Guaranteed by design, not subject to production test.
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