TMIN to T
參數(shù)資料
型號(hào)： ADF4216BRUZ-RL
廠商： Analog Devices Inc
文件頁(yè)數(shù)： 15/20頁(yè)
文件大?。?/td> 0K
描述： IC PLL FREQ SYNTHESIZER 20TSSOP
產(chǎn)品變化通告： ADF4213,16 Discontinuation 15/May/2012
標(biāo)準(zhǔn)包裝： 1
類型： 時(shí)鐘/頻率合成器（RF/IF）
PLL： 是
輸入： CMOS
輸出： 時(shí)鐘
電路數(shù)： 1
比率 - 輸入:輸出： 3:1
差分 - 輸入:輸出： 是/無
頻率 - 最大： 1.2GHz
除法器/乘法器： 是/無
電源電壓： 2.7 V ~ 5.5 V
工作溫度： -40°C ~ 85°C
安裝類型： 表面貼裝
封裝/外殼： 20-TSSOP（0.173"，4.40mm 寬）
供應(yīng)商設(shè)備封裝： 20-TSSOP
包裝： 標(biāo)準(zhǔn)包裝
其它名稱： ADF4216BRUZ-RLDKR
REV. 0
ADF4216/ADF4217/ADF4218
–4–
TIMING CHARACTERISTICS
Limit at
TMIN to TMAX
Parameter
(B Version)
Unit
Test Conditions/Comments
t1
10
ns min
DATA to CLOCK Setup Time
t2
10
ns min
DATA to CLOCK Hold Time
t3
25
ns min
CLOCK High Duration
t4
25
ns min
CLOCK Low Duration
t5
10
ns min
CLOCK to LE Setup Time
t6
20
ns min
LE Pulsewidth
NOTES
Guaranteed by design but not production tested.
Specication subject to change without notice.
CLOCK
DATA
LE
DB21 (MSB)
DB20
DB2
DB1
(CONTROL BIT C2)
t1
t2
t3
t4
t6
t5
DB0 (LSB)
(CONTROL BIT C1)
Figure 1. Timing Diagram
(VDD1 = VDD2 = 3 V
10%, 5 V
10%; VP1, VP2 = VDD , 5 V
10%; AGND = DGND = 0 V;
TA = TMIN to TMAX unless otherwise noted.)
ABSOLUTE MAXIMUM RATINGS
1, 2
(TA = 25
°C unless otherwise noted)
VDD1 to GND
3
. . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
VDD1 to VDD2 . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +0.3 V
VP1, VP2 to GND . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
VP1, VP2 to VDD1 . . . . . . . . . . . . . . . . . . . . –0.3 V to +5.5 V
Digital I/O Voltage to GND . . . . . . –0.3 V to DVDD + 0.3 V
Analog I/O Voltage to GND . . . . . . . . . –0.3 V to VP + 0.3 V
REFIN, RFINA, RFINB,
IFINA, IFINB to GND . . . . . . . . . . . –0.3 V to VDD + 0.3 V
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . –40
°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65
°C to +150°C
Maximum Junction Temperature . . . . . . . . . . . . . . . . 150
°C
TSSOP
θ
JA Thermal Impedance
. . . . . . . . . . . . . 150.4
°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . 215
°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220
°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specication is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2This device is a high-performance RF integrated circuit with an ESD rating of
< 2 kV and it is ESD sensitive. Proper precautions should be taken for handling
and assembly.
3GND = AGND = DGND = 0 V.
TRANSISTOR COUNT
11749 (CMOS) and 522 (Bipolar).
ORDERING GUIDE
Model
Temperature Range
Package Description
Package Option
*
ADF4216BRU
–40
°C to +85°C
Thin Shrink Small Outline Package (TSSOP)
RU-20
ADF4217BRU
–40
°C to +85°C
Thin Shrink Small Outline Package (TSSOP)
RU-20
ADF4218BRU
–40
°C to +85°C
Thin Shrink Small Outline Package (TSSOP)
RU-20
*Contact the factory for chip availability.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADF4216/ADF4217/ADF4218 features proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
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