參數(shù)資料
型號(hào): ADA4960-1ACPZ-R2
廠商: Analog Devices Inc
文件頁(yè)數(shù): 17/20頁(yè)
文件大小: 0K
描述: IC ADC DRIVER DIFF 16LFCSP
標(biāo)準(zhǔn)包裝: 1
類型: ADC 驅(qū)動(dòng)器
應(yīng)用: 數(shù)據(jù)采集
安裝類型: 表面貼裝
封裝/外殼: 16-WFQFN 裸露焊盤,CSP
供應(yīng)商設(shè)備封裝: 16-LFCSP-WQ(3x3)
包裝: 標(biāo)準(zhǔn)包裝
其它名稱: ADA4960-1ACPZ-R2DKR
ADA4960-1
Rev. 0 | Page 6 of 20
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Rating
Supply Voltage, VCC
5.25 V
VIP, VIN
VCC + 0.5 V
Internal Power Dissipation
Maximum Junction Temperature
150°C
Operating Temperature Range
40°C to +85°C
Storage Temperature Range
65°C to +150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the device (including the exposed pad) soldered
to a high thermal conductivity, 4-layer circuit board, as described
in EIA/JESD 51-7.
Table 3. Thermal Resistance
Package Type
θJA
Unit
16-Lead LFCSP (Exposed Pad)
89.5
°C/W
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the ADA4960-1 package
is limited by the associated rise in junction temperature (TJ) on
the die. At approximately 150°C, which is the glass transition
temperature, the plastic changes its properties. Even temporarily
exceeding this temperature limit can change the stresses that the
package exerts on the die, permanently shifting the parametric
performance of the ADA4960-1. Exceeding a junction temperature
of 150°C for an extended period can result in changes in the
silicon devices, potentially causing failure.
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated in the
package due to the load drive. The quiescent power is the voltage
between the supply pins (VS) times the quiescent current (IS).
The power dissipated due to the load drive depends upon the
particular application. The power due to load drive is calculated
by multiplying the load current by the associated voltage drop
across the device. RMS voltages and currents must be used in
these calculations.
Airflow increases heat dissipation, effectively reducing θJA. In
addition, more metal directly in contact with the package leads/
exposed pad from metal traces, through holes, ground, and power
planes reduce θJA.
Figure 3 shows the maximum safe power dissipation of the
ADA4960-1 vs. the ambient temperature on a JEDEC standard
4-layer board.
2.5
2.0
1.5
1.0
0.5
0
–40
–20
0
20
40
60
80
100
AMBIENT TEMPERATURE (°C)
MA
X
IMU
M
P
O
WER
D
ISS
IPA
T
IO
N
08
45
8-
00
2
QUIESCENT POWER
Figure 3. Maximum Power Dissipation vs. Ambient Temperature for 4-Layer Board
ESD CAUTION
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