The power dissipated in the package (P
參數(shù)資料
型號(hào): ADA4861-3YRZ-RL
廠商: Analog Devices Inc
文件頁數(shù): 14/17頁
文件大?。?/td> 0K
描述: IC OPAMP CF TRPL LP 100MA 14SOIC
標(biāo)準(zhǔn)包裝: 2,500
放大器類型: 電流反饋
電路數(shù): 3
轉(zhuǎn)換速率: 910 V/µs
-3db帶寬: 370MHz
電流 - 輸入偏壓: 2.9µA
電壓 - 輸入偏移: 100µV
電流 - 電源: 17.9mA
電流 - 輸出 / 通道: 100mA
電壓 - 電源,單路/雙路(±): 5 V ~ 12 V,±2.5 V ~ 6 V
工作溫度: -40°C ~ 105°C
安裝類型: 表面貼裝
封裝/外殼: 14-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 14-SOIC
包裝: 帶卷 (TR)
ADA4861-3
Rev. A | Page 5 of 16
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Rating
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated in the die
due to the amplifiers’ drive at the output. The quiescent power
is the voltage between the supply pins (VS) times the quiescent
current (IS).
Supply Voltage
12.6 V
Power Dissipation
Common-Mode Input Voltage
VS + 1 V to +VS 1 V
Differential Input Voltage
±VS
PD = Quiescent Power + (Total Drive Power Load Power)
Storage Temperature
65°C to +125°C
()
L
OUT
L
OUT
S
D
R
V
R
V
I
V
P
2
2
×
+
×
=
Operating Temperature Range
40°C to +105°C
Lead Temperature
JEDEC J-STD-20
Junction Temperature
150°C
RMS output voltages should be considered.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Airflow increases heat dissipation, effectively reducing θJA.
In addition, more metal directly in contact with the package
leads and through holes under the device reduces θJA.
Figure 3 shows the maximum safe power dissipation in the
package vs. the ambient temperature for the 14-lead SOIC_N
(90°C/W) on a JEDEC standard 4-layer board. θJA values are
approximations.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, θJA is
specified for device soldered in circuit board for surface-mount
packages.
2.5
0
AMBIENT TEMPERATURE (
°C)
M
AX
IM
UM
P
O
W
E
R
DI
S
IP
AT
IO
N
(
W
)
05
70
8-
00
2
–55
125
–45 –35 –25 –15 –5
5
152535455565758595 105 115
2.0
1.5
1.0
0.5
Table 4. Thermal Resistance
Package Type
θJA
Unit
14-lead SOIC_N
90
°C/W
Maximum Power Dissipation
The maximum safe power dissipation for the ADA4861-3 is
limited by the associated rise in junction temperature (TJ) on
the die. At approximately 150°C, which is the glass transition
temperature, the plastic changes its properties. Even temporarily
exceeding this temperature limit can change the stresses that the
package exerts on the die, permanently shifting the parametric
performance of the amplifiers. Exceeding a junction temperature of
150°C for an extended period can result in changes in silicon
devices, potentially causing degradation or loss of functionality.
Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
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