參數(shù)資料
型號: AD8170AR
廠商: Analog Devices Inc
文件頁數(shù): 11/16頁
文件大?。?/td> 0K
描述: IC MUX W/AMP BUFFERED 8-SOIC
標準包裝: 98
應用: 帶放大器的多路復用器
電源電壓: ±4 V ~ 6 V
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應商設備封裝: 8-SOIC
包裝: 管件
安裝類型: 表面貼裝
AD8170/AD8174
–4–
REV. 0
WARNING!
ESD SENSITIVE DEVICE
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8170/AD8174 feature proprietary ESD protection circuitry, permanent damage
may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation
2
AD8170 8-Lead Plastic (N) . . . . . . . . . . . . . . . . . 1.3 Watts
AD8170 8-Lead Small Outline (R) . . . . . . . . . . . 0.9 Watts
AD8174 14-Lead Plastic (N) . . . . . . . . . . . . . . . . 1.6 Watts
AD8174 14-Lead Small Outline (R) . . . . . . . . . . 1.0 Watts
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . .
±V
S
Output Short Circuit Duration . . Observe Power Derating Curves
Storage Temperature Range
N & R Packages . . . . . . . . . . . . . . . . . . . . –65
°C to +125°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300
°C
NOTES
1Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2Specification is for device in free air: 8-Pin Plastic Package:
θ
JA = 90°C/Watt;
8-Pin SOIC Package:
θ
JA = 160°C/Watt; 14-Pin Plastic Package: θJA = 90°C/Watt
14-Pin SOIC Package:
θ
JA = 120°C/Watt, where PD = (TJ–TA)/θJA.
ORDERING GUIDE
Temperature
Package
Model
Range
Description
Option
AD8170AN
–40
°C to +85°C 8-Pin Plastic DIP
N-8
AD8170AR
–40
°C to +85°C 8-Pin SOIC
SO-8
AD8170AR-REEL –40
°C to +85°C Reel 8-Pin SOIC
SO-8
AD8174AN
–40
°C to +85°C 14-Pin Plastic DIP
N-14
AD8174AR
–40
°C to +85°C 14-Pin Narrow SOIC R-14
AD8174AR-REEL –40
°C to +85°C Reel 14-Pin SOIC
R-14
AD8170-EB
Evaluation Board For AD8170R
AD8174-EB
Evaluation Board For AD8174R
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8170 and AD8174 is limited by the associated rise in
junction temperature. The maximum safe junction temperature
for plastic encapsulated devices is determined by the glass
transition temperature of the plastic, approximately +150
°C.
Exceeding this limit temporarily may cause a shift in parametric
performance due to a change in the stresses exerted on the die
by the package. Exceeding a junction temperature of +175
°C
for an extended period can result in device failure.
While the AD8170 and AD8174 are internally short circuit
protected, this may not be sufficient to guarantee that the maxi-
mum junction temperature (+150
°C) is not exceeded under all
conditions. To ensure proper operation, it is necessary to observe
the maximum power derating curves shown in Figures 2 and 3.
MAXIMUM
POWER
DISSIPATION
Watts
AMBIENT TEMPERATURE –
°C
2.0
1.5
0
–50
90
–40 –30 –20 –10
0
10
20
30
50
60
70
80
40
1.0
0.5
8-PIN MINI-DIP PACKAGE
8-PIN SOIC PACKAGE
TJ = +150°C
Figure 2. AD8170 Maximum Power Dissipation vs.
Temperature
AMBIENT TEMPERATURE –
°C
2.5
2.0
0.5
–50
90
–40
MAXIMUM
POWER
DISSIPATION
Watts
–30 –20 –10
0
10 20
30
40 50
60
80
1.5
1.0
70
14-PIN SOIC
14-PIN DIP PACKAGE
TJ = +150°C
Figure 3. AD8174 Maximum Power Dissipation vs.
Temperature
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