參數(shù)資料
型號(hào)： AD8118ABPZ
廠商： ANALOG DEVICES INC
元件分類： 運(yùn)動(dòng)控制電子
英文描述： 600 MHz, 32 】 32 Buffered Analog Crosspoint Switch
中文描述： 32-CHANNEL, CROSS POINT SWITCH, PBGA304
封裝： 31 X 31 MM, ROHS COMPLIANT, MO-192BAN-2, BGA-304
文件頁(yè)數(shù)： 7/36頁(yè)
文件大?。?/td> 804K
代理商： AD8118ABPZ
AD8117/AD8118
ABSOLUTE MAXIMUM RATINGS
Table 6.
Parameter
Analog Supply Voltage (V
POS
– V
NEG
)
Digital Supply Voltage (V
DD
– D
GND
)
Ground Potential Difference
(V
NEG
– D
GND
)
Maximum Potential Difference
(V
DD
– V
NEG
)
Common-Mode Analog Input
Voltage
Differential Analog Input Voltage
Digital Input Voltage
Output Voltage
(Disabled Analog Output)
Output Short-Circuit Duration
Output Short-Circuit Current
Storage Temperature
Operating Temperature Range
Lead Temperature
(Soldering 10 sec)
Junction Temperature
Rev. A | Page 7 of 36
Rating
6 V
6 V
+0.5 V to 2.5 V
8 V
V
NEG
to V
POS
±2 V
V
DD
(V
POS
1 V) to (V
NEG
+ 1 V)
Momentary
80 mA
65°C to +125°C
40°C to +85°C
300°C
150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θ
JA
is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 7. Thermal Resistance
Package Type
304-Ball BGA
θ
JA
14
θ
JC
1
θ
JB
6.5
ψ
JT
0.6
ψ
JB
5.7
Unit
°C/W
POWER DISSIPATION
The AD8117/AD8118 are operated with ±2.5 V or +5 V
supplies and can drive loads down to 100 Ω, resulting in a large
range of possible power dissipations. For this reason, extra care
must be taken derating the operating conditions based on
ambient temperature.
Packaged in a 304-ball BGA, the AD8117/AD8118 junction-to-
ambient thermal impedance (θ
JA
) is 14°C/W. For long-term
reliability, the maximum allowed junction temperature of the
die should not exceed 150°C. Temporarily exceeding this limit
may cause a shift in parametric performance due to a change in
stresses exerted on the die by the package. Exceeding a junction
temperature of 175°C for an extended period can result in
device failure. The following curve shows the range of allowed
internal die power dissipations that meet these conditions over
the 40°C to +85°C ambient temperature range. When using
the table, do not include external load power in the maximum
power calculation, but do include load current dropped on the
die output transistors.
8
4
15
85
M
AMBIENT TEMPERATURE (°C)
T
J
= 150°C
7
6
5
25
35
45
55
65
75
0
Figure 4. Maximum Die Power Dissipation vs. Ambient Temperature
ESD CAUTION
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