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參數(shù)資料
| 型號： | AD8048ARZ-REEL7 |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 12/17頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC OPAMP VF GP LDIST 50MA 8SOIC |
| 標準包裝： | 750 |
| 放大器類型： | 電壓反饋 |
| 電路數(shù)： | 1 |
| 轉(zhuǎn)換速率： | 1000 V/µs |
| -3db帶寬： | 260MHz |
| 電流 - 輸入偏壓： | 1µA |
| 電壓 - 輸入偏移： | 1000µV |
| 電流 - 電源： | 5.9mA |
| 電流 - 輸出 / 通道： | 50mA |
| 電壓 - 電源，單路/雙路(±)： | 6 V ~ 12 V，±3 V ~ 6 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SO |
| 包裝： | 帶卷 (TR) |
REV. A
AD8047/AD8048
–3–
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
AD8047/AD8048 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by these devices
is limited by the associated rise in junction temperature. The
maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the
plastic, approximately 150
°C. Exceeding this limit temporarily
may cause a shift in parametric performance due to a change in
the stresses exerted on the die by the package. Exceeding a
junction temperature of 175
°C for an extended period can
result in device failure.
While the AD8047 and AD8048 are internally short circuit
protected, this may not be sufficient to guarantee that the maxi-
mum junction temperature (150
°C) is not exceeded under all
conditions. To ensure proper operation, it is necessary to observe
the maximum power derating curves.
2.0
0
–50
80
1.5
0.5
–40
1.0
0
10
–10
–20
–30
20
30
40
50
60
70
90
AMBIENT TEMPERATURE ( C)
MAXIMUM
POWER
DISSIPATION
(W)
TJ = +150 C
8-PIN PDIP PACKAGE
8-PIN SOIC PACKAGE
Figure 2. Plot of Maximum Power Dissipation vs.
Temperature
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage, (+VS) – (–VS) . . . . . . . . . . . . . . . . . . . . 12.6 V
Voltage Swing
× Bandwidth Product
AD8047 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180 V-MHz
AD8048 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 V-MHz
Internal Power Dissipation
2
Plastic Package (N) . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3 W
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . 0.9 W
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . .
±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . .
±1.2 V
Output Short-Circuit Duration . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . .Observe Power Derating Curves
Storage Temperature Range (N, R) . . . . . . . –65
°C to +125°C
Operating Temperature Range (A Grade) . . . –40
°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300
°C
NOTES
1 Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2 Specification is for device in free air: 8-Lead PDIP Package,
JA = 90
°C/W; 8-Lead
SOIC Package, JA = 140
°C/W
METALLIZATION PHOTOS
Dimensions shown in inches and (mm)
Connect Substrate to –VS.
AD8047
+VS
VOUT
–VS
–IN
+IN
0.045
(1.14)
0.044
(1.13)
AD8048
+VS
VOUT
–VS
–IN
+IN
0.045
(1.14)
0.044
(1.13)
ORDERING GUIDE
Temperature
Package
Model
Range
Description
Option
*
AD8047AN
–40
°C to +85°CPDIP
N-8
AD8047AR
–40
°C to +85°C SOIC
R-8
AD8047AR-REEL
–40
°C to +85°C SOIC
R-8
AD8047AR-REEL7
–40
°C to +85°C SOIC
R-8
AD8048AN
–40
°C to +85°CPDIP
N-8
AD8048AR
–40
°C to +85°C SOIC
R-8
AD8048AR-REEL
–40
°C to +85°C SOIC
R-8
AD8048AR-REEL7
–40
°C to +85°C SOIC
R-8
*N = PDIP, R= SOIC
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