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參數(shù)資料
| 型號： | AD8022ARZ |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 14/17頁 |
| 文件大小： | 0K |
| 描述： | IC OPAMP VF DUAL LN LP 8SOIC |
| 設(shè)計資源： | AD7266 SAR ADC in DC-Coupled Differential and Single-Ended Appls (CN0039) AD7265 in Differential and Single-Ended Configurations Using AD8022 (CN0048) |
| 標(biāo)準(zhǔn)包裝： | 98 |
| 放大器類型： | 電壓反饋 |
| 電路數(shù)： | 2 |
| 轉(zhuǎn)換速率： | 50 V/µs |
| -3db帶寬： | 130MHz |
| 電流 - 輸入偏壓： | 2.5µA |
| 電壓 - 輸入偏移： | 1500µV |
| 電流 - 電源： | 4mA |
| 電流 - 輸出 / 通道： | 55mA |
| 電壓 - 電源，單路/雙路(±)： | 4.5 V ~ 26 V，±2.25 V ~ 13 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SO |
| 包裝： | 管件 |
| 產(chǎn)品目錄頁面： | 769 (CN2011-ZH PDF) |
Data Sheet
AD8022
Rev. C | Page 5 of 16
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Rating
Supply Voltage (+VS to VS)
26.4 V
Internal Power Dissipation1
8-Lead SOIC (R)
1.6 W
8-Lead MSOP (RM)
1.2 W
Input Voltage (Common Mode)
±VS
Differential Input Voltage
±0.8 V
Output Short-Circuit Duration
Observe Power Derating Curves
Storage Temperature Range
65°C to +125°C
Operating Temperature Range
(A Grade)
40°C to +85°C
Lead Temperature Range
(Soldering 10 sec)
300°C
1 Specification is for the device in free air:
8-Lead SOIC: θJA = 160°C/W.
8-Lead MSOP: θJA = 200°C/W.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8022 is limited by the associated rise in junction
temperature. The maximum safe junction temperature for
plastic encapsulated devices is determined by the glass
transition temperature of the plastic, approximately 150°C.
Temporarily exceeding this limit may cause a shift in
parametric performance due to a change in the stresses exerted
on the die by the package. Exceeding a junction temperature of
175°C for an extended period can result in device failure.
While the AD8022 is internally short-circuit protected, this may
not be sufficient to guarantee that the maximum junction
temperature (150°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the
maximum power derating curves.
AMBIENT TEMPERATURE (
°C)
M
AXIM
UM
POWER
DISSIPAT
ION
(
W
)
2.0
1.5
1.0
0.5
0
–50 –40 –30 –20 –10 0
10 20 30 40 50 60 70 80 90
01053-003
TJ = 150°C
8-LEAD SOIC PACKAGE
8-LEAD MSOP
Figure 3. Maximum Power Dissipation vs. Temperature
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
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