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| 型號(hào)： | AD7869JRZ |
| 廠商： | Analog Devices Inc |
| 文件頁(yè)數(shù)： | 11/16頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | IC I/O PORT 14BIT ANLG 28SOIC |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 應(yīng)用： | 模擬 I/O |
| 接口： | TTL/CMOS |
| 電源電壓： | 4.75 V ~ 5.25 V |
| 封裝/外殼： | 28-SOIC（0.295"，7.50mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 28-SOIC W |
| 包裝： | 管件 |
| 安裝類型： | 表面貼裝 |
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AD7869
TIMING SPECIFICATIONS1, 2
–4–
Limit at TMIN, TMAX
Parameter
(All Versions)
Units
Conditions/Comments
ADC TIMING
t1
50
ns min
CONVST Pulse Width
t2
3
440
ns min
RCLK Cycle Time, Internal Clock
t3
100
ns min
RFS to RCLK Falling Edge Setup Time
t4
20
ns min
RCLK Rising Edge to
RFS
100
ns max
t5
4
155
ns max
RCLK to Valid Data Delay, CL = 35 pF
t6
4
ns min
Bus Relinquish Time after RCLK
100
ns max
t13
5
2 RCLK + 200 to
ns typ
CONVST to RFS Delay
3 RCLK + 200
DAC TIMING
t7
50
ns min
TFS to TCLK Falling Edge
t8
75
ns min
TCLK Falling Edge to
TFS
t9
150
ns min
TCLK Cycle Time
t10
30
ns min
Data Valid to TCLK Setup Time
t11
75
ns min
Data Valid to TCLK Hold Time
tl2
40
ns min
LDAC Pulse Width
NOTES
1Timing specifications are sample tested at +25
°C to ensure compliance. All input signals are specified with tr = tf = 5 ns (10% to 90% of 5 V) and timed from a
voltage level of 1.6 V.
2Serial timing is measured with a 4.7 k
pull-up resistor on DR and RFS and a 2 k pull-up resistor on RCLK. The capacitance on all three outputs is 35 pF.
3When using internal clock, RCLK mark/space ratio (measured form a voltage level of 1.6 V) range is 40/60 to 60/40. For external clock, RCLK mark/space
ratio = external clock mark/space ratio.
4DR will drive higher capacitance loads but this will add to t
5 since it increases the external RC time constant (4.7 k
//C
L) and hence the time to reach 2.4 V.
5Time 2 RCLK to 3 RCLK depends on conversion start to ADC clock synchronization.
6TCLK mark/space ratio is 40/60 to 60/40.
ABSOLUTE MAXIMUM RATINGS*
(TA = + 25
°C unless otherwise noted)
VDD to AGND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
VSS to AGND . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –7 V
AGND to DGND . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V
VOUT to AGND . . . . . . . . . . . . . . . . . . . . . . . . . . . VSS to VDD
VIN to AGND . . . . . . . . . . . . . . . . VSS –0.3 V to VDD + 0.3 V
RO ADC to AGND . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V
RO DAC to AGND . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V
RI DAC to AGND . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V
Digital Inputs to DGND . . . . . . . . . . . –0.3 V to VDD + 0.3 V
Digital Outputs to DGND . . . . . . . . . . –0.3 V to VDD + 0.3 V
Operating Temperature Range
J Version . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0
°C to +70°C
A Version . . . . . . . . . . . . . . . . . . . . . . . . . . –40
°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65
°C to +150°C
Lead Temperature (Soldering, 10 secs) . . . . . . . . . . . +300
°C
Power Dissipation (Any Package) to +75
°C . . . . . . . 1000 mW
Derates above +75
°C by . . . . . . . . . . . . . . . . . . . . 10 mW/°C
*Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only; functional operation
of the device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
WARNING!
ESD SENSITIVE DEVICE
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD7869 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
(VDD = +5 V
5%, VSS = –5 V
5%, AGND = DGND = 0 V)
REV. B
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