參數(shù)資料
型號: AD7352YRUZ-500RL7
廠商: Analog Devices Inc
文件頁數(shù): 4/21頁
文件大小: 0K
描述: IC ADC DUAL 12BIT 3MSPS 16TSSOP
設(shè)計資源: DC-Coupled, Single-Ended-to-Differential Conversion Using AD8138 and AD7352 (CN0040)
標(biāo)準(zhǔn)包裝: 500
位數(shù): 12
采樣率(每秒): 3M
數(shù)據(jù)接口: DSP,MICROWIRE?,QSPI?,串行,SPI?
轉(zhuǎn)換器數(shù)目: 2
功率耗散(最大): 45mW
電壓電源: 單電源
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 16-TSSOP(0.173",4.40mm 寬)
供應(yīng)商設(shè)備封裝: 16-TSSOP
包裝: 帶卷 (TR)
輸入數(shù)目和類型: 2 個差分,雙極
AD7352
Rev. A | Page 11 of 20
Intermodulation Distortion (IMD)
With inputs consisting of sine waves at two frequencies, fa
and fb, any active device with nonlinearities creates distortion
products at sum and difference frequencies of mfa ± nfb where
m, n = 0, 1, 2, 3, and so on. Intermodulation distortion terms
are those for which neither m nor n is equal to zero. For example,
the second-order terms include (fa + fb) and (fa fb), while the
third-order terms include (2fa + fb), (2fa fb), (fa + 2fb), and
(fa 2fb).
The AD7352 is tested using the CCIF standard where two input
frequencies near the top end of the input bandwidth are used.
In this case, the second-order terms are usually distanced in
frequency from the original sine waves and the third-order
terms are usually at a frequency close to the input frequencies.
As a result, the second- and third-order terms are specified
separately. The calculation of the intermodulation distortion
is as per the THD specification, where it is the ratio of the rms
sum of the individual distortion products to the rms amplitude
of the sum of the fundamentals expressed in decibels.
Thermal Hysteresis
Thermal hysteresis is defined as the absolute maximum change
of reference output voltage after the device is cycled through
temperature from either
T_HYS+ = +25°C to TMAX to +25°C
T_HYS = +25°C to TMIN to +25°C
Thermal hysteresis is expressed in ppm using the following
equation:
6
10
)
25
(
)
_
(
)
25
(
)
ppm
(
×
°
°
=
C
V
HYS
T
V
C
V
REF
HYS
where:
VREF(25°C) is VREF at 25°C.
VREF(T_HYS) is the maximum change of VREF at T_HYS+
or T_HYS–.
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