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參數(shù)資料
| 型號(hào)： | A64E06161 |
| 廠商： | AMIC Technology Corporation |
| 英文描述： | 1M X 16 Bit Low Voltage Super RAM |
| 中文描述： | 100萬× 16位低電壓超內(nèi)存 |
| 文件頁數(shù)： | 2/20頁 |
| 文件大?。?/td> | 310K |
| 代理商： | A64E06161 |
A64E06161
Preliminary
1M X 16 Bit Low Voltage Super RAM
Features
Operating voltage:
VCC: 1.7V to 1.95V
VCCQ: 1.7V to VCC
Access times: t
AA
= 70ns (max.)
Page Access times: t
PAA
= 25ns (max)
Current:
A64E06161 series:
Operating Current (Icc1) : 15mA (max.)
Standby Current (Isb1) : 100uA (max)
Deep Power Down Standby Current (I
ZZ
) : 10
μ
A (max.)
4-word page length
Support 4 distinct operation modes for reducing standby
power :
Deep Power Down (DPD) mode
Reduce Memory Size (RMS) mode (4M, 8M, 12M)
Partial Array Refresh (PAR) mode (4M,8M,12M)
Temperature Compensated Refresh (TCR) mode
Industrial operating temperature range: -25
°
C to +85
°
C
for –
I
Available in 48-ball Mini BGA (6X8) package.
General Description
The A64E06161 is a low operating current 16,777,216-bit
super RAM organized as 1,048,576 word by 16bit and
operated on low power supply voltage from 1.7V to 1.95V.
It is built using AMIC’s high performance CMOS DRAM
process.
Using hidden refresh technique, the A64E06161 provides a
compatible asynchronous interface and data can be read in
4-word page mode for fast access times. The A64E06161
has an internal register named the Configuration Register
(CR) that controls the operation. The A64E06161 is
designed for reducing current consumption during hidden
self refresh and operating through following mode: Deep
Power Down (DPD) mode, Reduce Memory Size (RMS)
mode, Partial Array Refresh (PAR) mode and Temperature
Compensated refresh (TCR) mode.
This A64E06161 is suited for low power application such as
mobile phone and PDA or other battery-operated handheld
device.
Pin Configuration
Mini BGA (6X8) Top View
1
2
3
4
5
6
A
LB
OE
A0
A1
A2
ZZ
B
I/O
8
HB
A3
A4
CE
I/O
0
C
I/O
9
I/O
10
A5
A6
I/O
1
I/O
2
D
VSSQ
I/O
11
A17
A7
I/O
3
VCC
E
VCCQ
I/O
12
NC
A16
I/O
4
VSS
F
I/O
14
I/O
13
A14
A15
I/O
5
I/O
6
G
I/O
15
A19
A12
A13
WE
I/O
7
H
A18
A8
A9
A10
A11
NC
A64E06161G
PRELIMINARY
(November, 2004, Version 0.1)
1
AMIC Technology, Corp.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| A64E06161G-70 | 1M X 16 Bit Low Voltage Super RAM |
| A64E06161G-70I | 1M X 16 Bit Low Voltage Super RAM |
| A64E06161G-85 | 1M X 16 Bit Low Voltage Super RAM |
| A64E06161G-85I | 1M X 16 Bit Low Voltage Super RAM |
| A64E16161 | 2M X 16 Bit Low Voltage Super RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| A64E06161G-70 | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:1M X 16 Bit Low Voltage Super RAM |
| A64E06161G-70I | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:1M X 16 Bit Low Voltage Super RAM |
| A64E06161G-85 | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:1M X 16 Bit Low Voltage Super RAM |
| A64E06161G-85I | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:1M X 16 Bit Low Voltage Super RAM |
| A64E16161 | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:2M X 16 Bit Low Voltage Super RAM |
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