參數(shù)資料
型號(hào): A43L2616V-7V
廠商: AMIC Technology Corporation
英文描述: 1M X 16 Bit X 4 Banks Synchronous DRAM
中文描述: 100萬(wàn)× 16位× 4個(gè)銀行同步DRAM
文件頁(yè)數(shù): 28/41頁(yè)
文件大?。?/td> 1053K
代理商: A43L2616V-7V
A43L2616
(September, 2004, Version 3.1)
27
AMIC Technology, Corp.
Page Write Cycle at Different Bank @Burst Length=4
High
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
CS
RAS
CAS
ADDR
BS1
Row Active
(A-Bank)
Row Active
(B-Bank)
: Don't care
A10/AP
Write
(A-Bank)
WE
DBb1
DBb0
DAa0
DAa1
DAa2
DAa3
DBb2
DBb3
DCc0
DCc1
Write
(C-Bank)
Precharge
(All Banks)
DQM
DQ
t
CDL
DDd0
DDd1
*Note 2
t
RDL
*Note 1
Write
(D-Bank)
Write
(B-Bank)
Row Active
(C-Bank)
Row Active
(D-Bank)
RAa
RBb
CBb
CAa
RCc
RDd
CCc
CDd
RAa
BS0
RBb
RCc
RDd
CDd2
* Note:
1. To interrupt burst write by Row precharge, DQM should be asserted to mask invalid input data.
2. To interrupt burst write by Row precharge, both the write and precharge banks must be the same.
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