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參數(shù)資料
| 型號(hào)： | A29L160TG-90 |
| 廠商： | AMIC Technology Corporation |
| 英文描述： | 2M X 8 Bit / 1M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 2米x 8位/ 1米× 16位CMOS 3.0伏只，引導(dǎo)扇區(qū)閃存 |
| 文件頁(yè)數(shù)： | 13/42頁(yè) |
| 文件大?。?/td> | 572K |
| 代理商： | A29L160TG-90 |
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A29L160A Series
(May, 2005, Version 0.1)
12
AMIC Technology, Corp.
Common Flash Memory Interface (CFI)
The Common Flash Interface (CFI) specification outlines
device and host system software interrogation handshake,
which allows specific vendor-specified software algorithms to
be used for entire families of devices. Software support can
then be device-independent, JEDEC ID-independent, and
forward- and backward-compatible for the specified flash
device families. Flash vendors can standardize their existing
interface for long-term compatibility.
This device enters the CFI Query mode when the system
writes the CFI Query command, 98h, to address 55h in word
mode (or address AAh in byte mode), any time the
device is ready to read array data. The system can read CFI
information at the addresses given in Table 5-8. In word
mode, the upper address bits (A7-MSB) must be all zeros.
To terminate reading CFI data, the system must write the
reset command.
The system can also write the CFI query command when the
device is in the autoselect mode. The device enters the CFI
query mode, and the system can read CFI data at the
addresses given in Table 5-8. The system must write the
reset command to return the device to the autoselect mode.
Table 5. CFI Query Identification String
Addresses
(Word Mode)
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Ah
Addresses
(Byte Mode)
20h
22h
24h
26h
28h
2Ah
2Ch
2Eh
30h
32h
34h
Data
Description
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
Query Unique ASCII string “QRY”
Primary OEM Command Set
Address for Primary Extended Table
Alternate OEM Command Set (00h = none exists)
Address for Alternate OEM Extended Table (00h = none exists)
Table 6 System Interface String
Addresses
(Word Mode)
1Bh
Addresses
(Byte Mode)
36h
Data
Description
0027h
VCC Min. (write/erase)
I/O
7
-
I/O
4
: volt, I
/O
3
-
I/O
0
: 100 millivolt
1Ch
38h
0036h
VCC Max. (write/erase)
I/O
7
-
I/O
4
: volt, I
/O
3
-
I/O
0
: 100 millivolt
1Dh
3Ah
0000h
Vpp Min. voltage (00h = no Vpp pin present)
1Eh
3Ch
0000h
Vpp Max. voltage (00h = no Vpp pin present)
Typical timeout per single byte/word write 2
N
μ
s
Typical timeout for Min. size buffer write 2
N
μ
s (00h = not supported)
Typical timeout per individual block erase 2
N
ms
Typical timeout for full chip erase 2
N
ms (00h = not supported)
Max. timeout for byte/word write 2
N
times typical
Max. timeout for buffer write 2
N
times typical
Max. timeout per individual block erase 2
N
times typical
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
1Fh
3Eh
0004h
20h
40h
0000h
21h
42h
000Ah
22h
44h
0000h
23h
46h
0005h
24h
48h
0000h
25h
4Ah
0004h
26h
4Ch
0000h
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| A29L160TM-120 | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:2M X 8 Bit / 1M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory |
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| A29L160TM-90 | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:2M X 8 Bit / 1M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| A29L160TV-120 | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:2M X 8 Bit / 1M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory |
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