參數(shù)資料
型號: A29DL324V
廠商: AMIC Technology Corporation
英文描述: 32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
中文描述: 32兆位(4米× 8-Bit/2M x 16位),3.0伏的CMOS只,同時(shí)作業(yè)快閃記憶體
文件頁數(shù): 44/50頁
文件大?。?/td> 771K
代理商: A29DL324V
A29DL32x Series
PRELIMINARY
(May, 2005, Version 0.0)
43
AMIC Technology, Corp.
AC CHARACTERISTICS
Alternate
CE
Controlled Erase and Program Operations
Parameter
Speed
JEDEC
Std
Description
-70
-80
-90
-120
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min.
70
80
90
120
ns
t
AVEL
t
AS
Address Setup Time
Min.
0
ns
t
ELAX
t
AH
Address Hold Time
Min.
45
45
45
50
ns
t
DVEH
t
DS
Data Setup Time
Min.
35
35
45
50
ns
t
EHDX
t
DH
Data Hold Time
Min.
0
ns
t
GHEL
t
GHEL
Read Recover Time Before Write
(
OE
High to
WE
Low)
Min.
0
ns
t
WLEL
t
WS
WE
Setup Time
Min.
0
ns
t
EHWH
t
WH
WE
Hold Time
Min.
0
ns
t
ELEH
t
CP
CE
Pulse Width
Min.
30
30
45
50
ns
t
EHEL
t
CPH
CE
Pulse Width High
Min.
30
30
30
30
ns
Byte
Typ.
5
t
WHWH1
t
WHWH1
Programming Operation
(Note 2)
Word
Typ.
7
μ
s
t
WHWH1
t
WHWH1
Accelerated Programming Operation,
Word or Byte (Note 2)
Typ.
4
μ
s
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ.
0.7
sec
Notes:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
相關(guān)PDF資料
PDF描述
A29DL32X 32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
A29DL322TV-120 32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
A29DL322TV-70 32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
A29DL322TV-80 32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
A29DL322TV-90 32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
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