參數(shù)資料
型號(hào): A1112PC
英文描述: A1112 High-Power 1550 nm DFB Source Lasers
中文描述: A1112高功率激光器源1550納米激光器
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 53K
代理商: A1112PC
2
Agere Systems Inc.
Data Sheet
January 2001
A1112 High-Power 1550 nm DFB Source Lasers
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are abso-
lute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess
of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended
periods can adversely affect device reliability.
Electrical/Optical Characteristics
Parameter
Symbol
T
C
Tstg
I
F
Min
–20
–40
Max
65
70
Unit
°
C
°
C
Operating Case Temperature Range
Storage Temperature Range
Forward Current (Laser)
A1112PB, A1112NB
A1112PC, A1112NC
Reverse Voltage (Laser)
Photodiode Reverse Voltage
TEC Voltage
TEC Current
Cooling
Heating
275
400
2.0
10
2.0
mA
mA
V
V
V
V
R
V
RPD
V
TEC
I
TEC
1.8
1.5
A
A
Table 1. Optical Characteristics
(25 °C Case Temperature)
Parameter
Symbol
P
O
Conditions
Min
Max
Unit
Optical Output Power
A1112PB, A1112NB
A1112PC, A1112NC
Center Wavelength
Linewidth (FWHM)
Side Mode Suppression Ratio
Relative Intensity Noise
I
OP
I
OP
I
OP
l
OP
,
30
40
1540
30
mW
mW
nm
MHz
dB
dBc/Hz
λ
C
V
1560
3
–162
SMSR
RIN
40 MHz to 860 MHz
–20 °C to +65°C
From fiber end, I
OP
Operating Current
Threshold Current
Forward Voltage
Optical Isolation
Polarization Extinction Ratio
Reverse Voltage
I
OP
I
TH
V
F
T
E
/T
M
V
R
30
20
250/350
35/40
2.5/3.0
2.0
mA
mA
V
dB
dB
V
Table 2. Electrical Characteristics
Parameter
Symbol
V
RMPD
I
MPD
I
TEC
V
TEC
R
TH
Condition
Iop
T = 40 °C
T = 40 °C
25
°
C
Min
40
9.0
Max
10
2000
1.8
2.2
11.0
Unit
V
μ
A
A
V
k
Monitor Photodiode Reverse Voltage
Monitor Photodiode Current
TEC Current
TEC Voltage
Thermistor Resistance
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