參數(shù)資料
型號: 97SD3240RPMK
廠商: MAXWELL TECHNOLOGIES
元件分類: DRAM
英文描述: 32M X 40 SYNCHRONOUS DRAM, 6 ns, QFP132
封裝: STACK, QFP-132
文件頁數(shù): 19/39頁
文件大?。?/td> 760K
代理商: 97SD3240RPMK
97SD3240
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All data sheets are subject to change without notice
2004 Maxwell Technologies
All rights reserved.
1.25Gb (8-Meg X 40-Bit X 4-Banks) SDRAM
03.26.04 Rev 1
Read command to Write command Interval:
1. Same bank, same ROW address: When the write command is executed at the same ROW address of
the same bank as the preceding read command, the write command can be performed after an interval of no
less than 1 clock. However, DQM must be set High so the output buffer becomes High-Z before data input.
READ to WRITE Command Interval (1)
READ to WRITE Command Interval (2)
2. Same bank, different ROW address: When the ROW address changes, consecutive write commands
cannot be executed; it is necessary to separate the two commands with a precharge command and a bank-
active command.
3. Different bank: When the bank changes, the write command can be performed after an interval of no
less than 1 cycle, provided that the other bank is in the bank-active state. However, DQM must be set High
so that the output buffer becomes High-Z before data input.
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