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參數(shù)資料
| 型號： | 935268252551 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 1 CHANNEL(S), 400M bps, SERIAL COMM CONTROLLER, PQFP144 |
| 封裝： | 20 X 20 MM, 1.40 MM HEIGHT, PLASTIC, MS-026, SOT-486-1, LQFP-144 |
| 文件頁數(shù)： | 3/80頁 |
| 文件大小： | 306K |
| 代理商： | 935268252551 |
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Philips Semiconductors
Preliminary specification
PDI1394L40
1394 enhanced AV link layer controller
2000 Dec 15
8
10.0
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
CONDITIONS
LIMITS
UNIT
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
DC supply voltage
3.0
3.6
V
VI
Input voltage
0
5
V
VIH
High-level input voltage
2.0
V
VIL
Low-level input voltage
0.8
V
IOH
High-level output current
4
mA
IOL
Low-level output current
–4
mA
dT/dV
Input transition rise or fall time
0
20
ns/V
Tamb
Operating ambient temperature range
0
+70
°C
SCLK
System clock
49.147
49.157
MHz
AVCLK
AV interface clock
0
24
MHz
tr
Input rise time
10
ns
tf
input fall time
10
ns
11.0
ABSOLUTE MAXIMUM RATINGS1, 2
In accordance with the Absolute Maximum Rating System (IEC 134). Voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
CONDITIONS
LIMITS
UNIT
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VDD
DC supply voltage
–0.5
+4.6
V
IIK
DC input diode current
–
–50
mA
VI
DC input voltage
–0.5
+5.5
V
IOK
DC output diode current
–
±50
mA
VO
DC output voltage
–0.5
VDD +0.5
V
IO
DC output source or sink current
–
±50
mA
IGND, ICC
DC VCC or GND current
–
±150
mA
Tstg
Storage temperature range
–60
150
°C
Tamb
Operating ambient temperature
0
70
°C
Ptot
Power dissipation per package
0.6
W
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150
°C.
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