參數(shù)資料
型號: 935262927118
廠商: NXP SEMICONDUCTORS
元件分類: 通信及網(wǎng)絡
英文描述: SPECIALTY TELECOM CIRCUIT, PDSO8
封裝: PLASTIC, SOT-96, SO-8
文件頁數(shù): 17/18頁
文件大?。?/td> 156K
代理商: 935262927118
1998 Jul 08
8
Philips Semiconductors
Objective specication
SDH/SONET STM1/OC3 transimpedance amplier
TZA3033
Notes
1. All In(tot) measurements were made with an input capacitance of Ci = 1 pF. This was comprised of 0.5 pF for the
photodiode itself, with 0.3 pF allowed for the printed-circuit board layout and 0.2 pF intrinsic to the package.
2. PSRR is defined as the ratio of the equivalent current change at the input (
IIPhoto) to a change in supply voltage:
For example, a disturbance of +4 mV disturbance on VCC at 10 MHz will typically add an extra 2 nA to the photodiode
current. The external capacitor between DREF and GND has a large impact on PSRR. The specification is valid with
an external capacitor of 1 nF.
In(tot)
total integrated RMS
noise current over
bandwidth
referred to input; note 1
f = 90 MHz
16
nA
f = 120 MHz
tbf
nA
f = 150MHz
tbf
nA
R
tr/t
AGC loop constant
1
dB/ms
PSRR
power supply rejection
ratio
measured differentially;
note 2
f = 100 kHz to 10 MHz
0.5
A/V
f = 100 MHz
10
A/V
Input: IPhoto
Ii(IPhoto)(p-p)
input current on
pin IPhoto (peak-to-peak
value)
VCC =5V
500
+1
+1800
A
VCC = 3.3 V
500
+1
+1600
A
Vbias(IPhoto) input bias voltage on
pin IPhoto
1048
mV
Data outputs: OUT and OUTQ
VO(CM)
common mode output
voltage
AC coupled; RL =50
VCC 1.800 VCC 1.700 VCC 1.600 V
Vo(se)(p-p)
single-ended output
voltage (peak-to-peak
value)
AC coupled; RL =50
150
260
mV
VOO
differential output offset
voltage
100
+100
mV
Ro
output resistance
single-ended; DC tested
42
50
58
tr
rise time
20% to 80%
tbf
ps
tf
fall time
80% to 20%
tbf
ps
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
PSRR
I
IPhoto
V
CC
--------------------
=
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