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參數(shù)資料
| 型號： | 935262358026 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 數(shù)字傳輸電路 |
| 英文描述： | ATM/SONET/SDH SUPPORT CIRCUIT, UUC36 |
| 封裝： | DIE-36 |
| 文件頁數(shù)： | 13/30頁 |
| 文件大?。?/td> | 179K |
| 代理商： | 935262358026 |
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2000 Sep 29
20
Philips Semiconductors
Product specication
SDH/SONET STM16/OC48 main ampliers
OQ2538HP; OQ2538U
Table 1
Bonding pad locations. All x/y coordinates
represent the position of the centre of the pad
with respect to the centre of the die (see
Fig.16).
SYMBOL
PAD
COORDINATES
xy
GND
1
900
700
VEE
2
900
VEE
3
700
900
GND
4
500
900
GND
5
300
900
LOSDC
6
100
900
LOS
7
+100
900
GND
8
+300
900
REF
9
+500
900
CAPA
10
+700
900
VEE
11
+900
900
VEE
12
+900
700
GND
13
+900
500
GND
14
+900
300
OUTQ
15
+900
100
GND
16
+900
+100
OUT
17
+900
+300
GND
18
+900
+500
GND
19
+900
+700
n.c.
20
+900
GND
21
+700
+900
n.c.
22
+500
+900
GND
23
+300
+900
GND
24
+100
+900
AGCDC
25
100
+900
COFFQ
26
300
+900
COFF
27
500
+900
VEE
28
700
+900
VEE
29
900
+900
AGC
30
900
+700
GND
31
900
+500
GND
32
900
+300
INQ
33
900
+100
GND
34
900
100
IN
35
900
300
GND
36
900
500
SYMBOL
PAD
COORDINATES
xy
Table 2
Physical characteristics of bare die
PARAMETER
VALUE
Glass passivation
0.8
m silicon nitride on top of 0.9 m PSG (PhosphoSilicate Glass)
Bonding pad dimension
minimum dimension of exposed metallization is 90
× 90 m (pad size = 100 × 100 m)
Metallization
1.8
m AlCu (1% Cu)
Thickness
380
m nominal
Size
2.070
× 2.070 mm (4.285 mm2)
Backing
silicon; electrically connected to VEE potential through substrate contacts
Attache temperature
<440
°C; recommended die attache is glue
Attache time
<15 s
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