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參數(shù)資料
| 型號： | 935260128112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 無繩電話/電話 |
| 英文描述： | SPEAKER PHONE CIRCUIT, PDSO24 |
| 封裝： | PLASTIC, SOT-340, SSOP-24 |
| 文件頁數(shù)： | 7/31頁 |
| 文件大小： | 259K |
| 代理商： | 935260128112 |
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1997 Nov 25
15
Philips Semiconductors
Product specication
Voice switched speakerphone IC
TEA1095
Gvrxm
gain reduction with MUTERX
active
MUTERX = HIGH
80
dB
Envelope and noise detectors (TSEN, TENV, TNOI, RSEN, RENV and RNOI)
PREAMPLIFIERS
Gv(TSEN)
voltage gain from TXIN to TSEN
40
dB
Gv(RSEN)
voltage gain between RXIN to
RSEN
0
dB
LOGARITHMIC COMPRESSOR AND SENSITIVITY ADJUSTMENT
det(TSEN)
sensitivity detection on pin TSEN;
voltage change on pin TENV
when doubling the current from
TSEN
ITSEN = 0.8 to 160 A
18
mV
det(RSEN)
sensitivity detection on pin RSEN;
voltage change on pin RENV
when doubling the current from
RSEN
IRSEN = 0.8 to 160 A
18
mV
SIGNAL ENVELOPE DETECTORS
Isource(ENV)
maximum current sourced from
pin TENV or RENV
120
A
Isink(ENV)
maximum current sunk by
pin TENV or RENV
0.75
1
1.25
A
V
ENV
voltage difference between
pins RENV and TENV
when 10
A is sourced
from both RSEN and
TSEN; envelope detectors
tracking; note 1
±3
mV
NOISE ENVELOPE DETECTORS
Isource(NOI)
maximum current sourced from
pins TNOI or RNOI
0.75
1
1.25
A
Isink(NOI)
maximum current sunk by
pins TNOI or RNOI
120
A
VNOI
voltage difference between
pins RNOI and TNOI
when 2
A is sourced
from both RSEN and
TSEN; noise detectors
tracking; note 1
±3
mV
DIAL TONE DETECTOR
VRINDT(rms)
threshold level at pin RXIN
(RMS value)
42
mV
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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