
1997 Nov 25
14
Philips Semiconductors
Product specication
Voice switched speakerphone IC
TEA1095
Gvtxf
voltage gain variation with
frequency referenced to 1 kHz
VTXIN = 1 mV (RMS);
f = 300 to 3400 Hz
±0.3
dB
Vnotx
noise output voltage at
pin TXOUT
pin TXIN connected to
TXGND through 200
in
series with 10
F;
psophometrically
weighted (P53 curve)
100
dBmp
TRANSMIT MUTE INPUT MUTETX
VIL
LOW level input voltage
VGND 0.4
0.3
V
VIH
HIGH level input voltage
1.5
VBB + 0.4 V
IMUTETX
input current
MUTETX = HIGH
2.5
5
A
G
vtxm
voltage gain reduction with
MUTETX active
MUTETX = HIGH
80
dB
Receive channel (RXIN, GARX, RXOUT and MUTERX)
RECEIVE AMPLIFIER
Zi
input impedance between pins
RXIN and GND
17
20
23
k
Gvrx
voltage gain from RXIN to
RXOUT in receive mode
VRXIN = 20 mV (RMS);
RGARX = 16.5 k
6.5
dB
G
vrxr
voltage gain adjustment with
RGARX
20.5
+19.5
dB
GvrxT
voltage gain variation with
temperature referenced to 25
°C
VRXIN = 20 mV (RMS);
Tamb = 25 to +75 °C
±0.3
dB
G
vrxf
voltage gain variation with
frequency referenced to 1 kHz
VRXIN = 20 mV (RMS);
fi = 300 to 3400 Hz
±0.3
dB
Vnorx(rms)
noise output voltage at pin
RXOUT (RMS value)
input RXIN short-circuited
through 200
in series
with 10
F;
psophometrically
weighted (P53 curve)
20
V
G
vrxv
voltage gain variation referenced
to
RVOL = 950
when total attenuation
does not exceed the
switching range
3
dB
RECEIVE MUTE INPUT MUTERX
VIL
LOW level input voltage
VGND 0.4
0.3
V
VIH
HIGH level input voltage
1.5
VBB + 0.4 V
IMUTERX
input current
MUTERX = HIGH
2.5
5
A
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT